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IS61C64AL-10TLI PDF预览

IS61C64AL-10TLI

更新时间: 2024-11-17 04:44:47
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路静态存储器光电二极管PC
页数 文件大小 规格书
13页 96K
描述
8K x 8 HIGH-SPEED CMOS STATIC RAM

IS61C64AL-10TLI 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSOP
包装说明:TSOP1, TSSOP28,.53,22针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41Factory Lead Time:6 weeks
风险等级:5.64Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:1145183
Samacsys Pin Count:28Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:28-Pin TSOP
Samacsys Released Date:2020-01-03 15:31:59Is Samacsys:N
最长访问时间:10 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G28JESD-609代码:e3
长度:11.8 mm内存密度:65536 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:28字数:8192 words
字数代码:8000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:8KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP28,.53,22封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.0001 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.05 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:0.55 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:8 mm
Base Number Matches:1

IS61C64AL-10TLI 数据手册

 浏览型号IS61C64AL-10TLI的Datasheet PDF文件第2页浏览型号IS61C64AL-10TLI的Datasheet PDF文件第3页浏览型号IS61C64AL-10TLI的Datasheet PDF文件第4页浏览型号IS61C64AL-10TLI的Datasheet PDF文件第5页浏览型号IS61C64AL-10TLI的Datasheet PDF文件第6页浏览型号IS61C64AL-10TLI的Datasheet PDF文件第7页 
®
IS61C64AL  
ISSI  
MARCH2006  
8K x 8 HIGH-SPEED CMOS STATIC RAM  
FEATURES  
DESCRIPTION  
The ISSI IS61C64AL is a very high-speed, low power,  
8192-word by 8-bit static RAM. It is fabricated using ISSI's  
high-performance CMOS technology. This highly reliable  
processcoupledwithinnovativecircuitdesigntechniques,  
yields access times as fast as 10 ns with low power  
consumption.  
• High-speed access time: 10 ns  
• CMOS low power operation  
— 1 mW (typical) CMOS standby  
— 125 mW (typical) operating  
• TTL compatible interface levels  
• Single 5V power supply  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduced down to 150 µW (typical) with CMOS input levels.  
• Fully static operation: no clock or refresh  
required  
• Lead-free available  
Easy memory expansion is provided by using one Chip  
Enable input, CE. The active LOW Write Enable (WE)  
controls both writing and reading of the memory.  
The IS61C64AL is packaged in the JEDEC standard 28-  
pin, 300-mil SOJ, and TSOP.  
FUNCTIONAL BLOCK DIAGRAM  
8K x 8  
MEMORY ARRAY  
A0-A12  
DECODER  
VDD  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
1
Rev. A  
03/16/06  

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