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IS61C64AL_0610 PDF预览

IS61C64AL_0610

更新时间: 2024-11-17 04:44:47
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
13页 104K
描述
8K x 8 HIGH-SPEED CMOS STATIC RAM

IS61C64AL_0610 数据手册

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®
IS61C64AL  
ISSI  
OCTOBER2006  
8K x 8 HIGH-SPEED CMOS STATIC RAM  
FEATURES  
DESCRIPTION  
The ISSI IS61C64AL is a very high-speed, low power,  
8192-word by 8-bit static RAM. It is fabricated using ISSI's  
high-performance CMOS technology. This highly reliable  
processcoupledwithinnovativecircuitdesigntechniques,  
yields access times as fast as 10 ns with low power  
consumption.  
• High-speed access time: 10 ns  
• CMOS low power operation  
— 1 mW (typical) CMOS standby  
— 125 mW (typical) operating  
• TTL compatible interface levels  
• Single 5V power supply  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduced down to 150 µW (typical) with CMOS input levels.  
• Fully static operation: no clock or refresh  
required  
• Lead-free available  
Easy memory expansion is provided by using one Chip  
Enable input, CE. The active LOW Write Enable (WE)  
controls both writing and reading of the memory.  
The IS61C64AL is packaged in the JEDEC standard 28-  
pin, 300-mil SOJ, and TSOP.  
FUNCTIONAL BLOCK DIAGRAM  
8K x 8  
MEMORY ARRAY  
A0-A12  
DECODER  
VDD  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
1
Rev. B  
10/23/06  

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