Datasheet > IRLR8711CPBF

IRLR8711CPBF

更新时间： 2024-09-14 04:23:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	661K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRLR8711CPBF 数据手册

PD - 97238A

IRLR8711CPbF

HEXFET^®Power MOSFET

Applications

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

V_DSSR_DS(on)max

13nC

5.6m

25V

Benefits

l Very Low R_DS(on)at 4.5V V_GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

D-Pak

l Lead-Free

IRLR8711CPbF

Gate

Drain

Source

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_C= 25°C

@ T_C= 100°C

340

Maximum Power Dissipation

@T_C= 25°C

@T_C= 100°C

Linear Derating Factor

Operating Junction and

0.45

-55 to + 175

W/°C

°C

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Thermal Resistance

Parameter

Typ.

Max.

2.2

Units

Junction-to-Case

R_θ

–––

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

°C/W

110

Notes through are on page 10

www.irf.com

09/22/06

12 3 4 5 6 7...9

中文翻译

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