IRLR8713PBF

更新时间： 2024-09-14 04:23:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
10页	333K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRLR8713PBF 数据手册

PD - 97067

IRLR8713PbF

IRLU8713PbF

HEXFET^®Power MOSFET

Applications

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

V_DSSR_DS(on)max

4.8m:

25V

17.4nC

Benefits

l Very Low R_DS(on)at 4.5V V_GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

D-Pak

IRLR8713PbF

I-Pak

IRLU8713PbF

l Lead-Free

Gate

Drain

Source

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

100

@ T_C= 25°C

@ T_C= 100°C

410

Maximum Power Dissipation

@T_C= 25°C

@T_C= 100°C

Linear Derating Factor

Operating Junction and

0.54

W/°C

°C

-55 to + 175

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

1.86

Units

R_θJC

R_θJA

–––

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

°C/W

110

Notes through are on page 10

www.irf.com

12/7/05

12 3 4 5 6 7...10

中文翻译

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与IRLR8713PBF相关器件

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