Datasheet > IRLR8721TR

IRLR8721TR

更新时间： 2024-09-15 10:22:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	364K
描述
Power Field-Effect Transistor, 65A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

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中文翻译

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数据手册

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IRLR8721TR 数据手册

PD - 96119

IRLR8721PbF

IRLU8721PbF

HEXFET^®Power MOSFET

Applications

V_DSSR_DS(on)max

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

l Lead-Free

8.4m

30V

8.5nC

Benefits

l Very Low RDS(on) at 4.5V V_GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

D-Pak

IRLR8721PbF

I-Pak

IRLU8721PbF

Gate

Drain

Source

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_C= 25°C

@ T_C= 100°C

260

@T_C= 25°C

@T_C= 100°C

Maximum Power Dissipation

Linear Derating Factor

Operating Junction and

0.43

-55 to + 175

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

2.3

Units

R_θJC

R_θJA

–––

Junction-to-Ambient (PCB Mount)

°C/W

Junction-to-Ambient

110

Notes through ꢀ are on page 11

www.irf.com

08/10/07

12 3 4 5 6 7...11

中文翻译

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与IRLR8721TR相关器件

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IRLR8721TRL	INFINEON	获取价格	Power Field-Effect Transistor, 65A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Me
IRLR8721TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 65A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Me
IRLR8721TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 65A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Me
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IRLR8726TRL	INFINEON	获取价格	Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Met