Datasheet > IRLR8726TR

IRLR8726TR

更新时间： 2024-05-23 22:22:34

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	471K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:86A;Vgs(th)(V):±20;漏源导通电阻:5.8mΩ@10V;漏源导通电阻:8mΩ@4.5V

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数据手册

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IRLR8726TR 数据手册

UMW

IRLR8726

N-Channel MOSFET

Features

VDS (V)=30V

RDS(ON)

5.8m (VGS = 10V)

8 m (VGS = 4.5V)

RDS(ON)

Applications

High Frequency Synchronous Buck

Converters for Computer Processor Power

High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

Benefits

Very Low R_DS(on)at 4.5V V_GS

Ultra-Low Gate Impedance

Fully Characterized Avalanche Voltage

and Current

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

Units

V_DS

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_C= 25°C

@ T_C= 100°C

340

Maximum Power Dissipation

@T_C= 25°C

@T_C= 100°C

Linear Derating Factor

Operating Junction and

0.5

W/°C

°C

-55 to + 175

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Case

2.0

R_θJC

R_θJA

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

°C/W

110

Notes

Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 0.605mH, R_G= 25Ω, I_AS= 20A.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Calculated continuous current based on maximum allowable junction temperature. Package limitation

current is 50A.

ꢀ When mounted on 1" square PCB (FR-4 or G-10 Material).For recommended footprint and soldering techniques

refer to application note #AN-994.

R_θis measured at T_Japproximately at 90°C

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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