IRLR2908TRR

更新时间： 2024-11-06 13:08:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
11页	206K
描述
Power Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

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IRLR2908TRR 数据手册

PD - 94501

IRLR2908

AUTOMOTIVE MOSFET

IRLU2908

HEXFET^®Power MOSFET

Features

Advanced Process Technology

V_DSS= 80V

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

R_DS(on)= 28mΩ

Repetitive Avalanche Allowed up to Tjmax

I_D= 30A

Description

Specifically designed for Automotive applications, this HEXFET ® Power MOSFET

utilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersilicon

area.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperating

temperature, low RθJC, fast switching speed and improved repetitive avalanche rating.

Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledevicefor

use in Automotive applications and a wide variety of other applications.\

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave

solderingtechniques. Thestraightleadversion(IRFUseries)isforthrough-holemounting

applications. Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemount

applications.

I-Pak

IRLU2908

D-Pak

IRLR2908

Absolute Maximum Ratings

Parameter

Max.

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

@ T_C= 25°C

@ T_C= 100°C

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (See Fig. 9)

(Package Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

150

120

@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

0.77

± 16

W/°C

E_AS

180

250

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

_AS(tested)

Avalanche Current

I_AR

E_AR

See Fig.12a,12b,15,16

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

dv/dt

2.3

V/ns

°C

-55 to + 175

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

1.3

Units

R_θJC

R_θJA

Junction-to-Case

°C/W

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

110

www.irf.com

02/13/03

12 3 4 5 6 7...11

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与IRLR2908TRR相关器件

型号	品牌	获取价格	描述	数据表
IRLR2908TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLR3101	ETC	获取价格
IRLR3103	INFINEON	获取价格	Power MOSFET(Vdss=30V, Rds(on)=0.019ohm, Id=4
IRLR3103PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRLR3103TR	INFINEON	获取价格	HEXFETÂ® Power MOSFET
IRLR3103TRBDF	ETC	获取价格	IR 2004+
IRLR3103TRL	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Met
IRLR3103TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Met
IRLR3103TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Met
IRLR3103TRR	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Met

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