IRHY54230CMPBF

更新时间： 2024-01-02 21:40:35

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IRHY54230CMPBF 数据手册

Radiation Characteristics

IRHY57230CM

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀

Parameter

Up to 600K Rads(Si) 1000K Rads (Si)²Units

Test Conditions

Min

Max

Min

Max

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

200

2.0

—

4.0

100

-100

200

1.5

—

4.0

100

-100

= 0V, I = 1.0mA

DSS

GS D

V = V , I = 1.0mA

DS D

GS(th)

= 20V

GSS

—

= -20 V

GSS

—

µA

=160V, V =0V

DS GS

DSS

Static Drain-to-Source

On-State Resistance (TO-3)

Static Drain-to-Source

On-State Resistance (TO-257AA)

Diode Forward Voltage

➀

—

0.215

—

0.265

Ω

= 12V, I = 8.0A

DS(on)

➀

—

0.21

1.2

—

0.26

1.2

Ω

= 12V, I = 8.0A

➀

= 0V, I = 12.5A

1. Part numbers IRHY57230CM, IRHY53230CM and IRHY54230CM

2. Part number IRHY58230CM

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

V_DS(V)

Ion

LET

MeV/(mg/cm²))

36.7

Energy

(MeV)

309

341

350

Range

(µm) @V_GS=0V @V_GS=-5V @V_GS=-10V @V_GS=-15V @V_GS=-20V

39.5

32.5

28.4

200

150

—

59.4

82.3

250

200

150

100

-5

-10

-15

-20

VGS

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com

1 234 5 6 7 8

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