IRHY54230CMPBF

更新时间： 2024-01-29 09:31:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	119K
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数据手册

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IRHY54230CMPBF 数据手册

Pre-Irradiation

IRHY57230CM

2000

= 0V,

f = 1MHz

C SHORTED

= 132A.5A

= C + C

= 160V

= 100V

= 40V

iss

gd ,

= C

rss

= C + C

1600

1200

800

400

oss

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

100

30 40

, Drain-to-Source Voltage (V)

, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

1000

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

T = 150 C

10us

T = 25 C

100us

1ms

10ms

T = 25 C

T = 150 C

Single Pulse

= 0 V

0.1

0.4

100

0.6

0.8

1.0

1.2

, Drain-to-Source Voltage (V)

,Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

www.irf.com

1 2 3 456 7 8

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