IRHY54230CMPBF

更新时间： 2024-02-02 09:52:59

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英飞凌 - INFINEON		/
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IRHY54230CMPBF 数据手册

IRHY57230CM

Pre-Irradiation

Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

DSS

Drain-to-Source Breakdown Voltage

200

—

= 0V, I = 1.0mA

V/°C Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.26

DSS

Voltage

Static Drain-to-Source On-State

Resistance

—

0.21

Ω

V = 12V, I = 8.0A

GS D

DS(on)

➀

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

2.0

—

4.0

—

= V , I = 1.0mA

GS(th)

Ω

S ( )

> 15V, I

= 8.0A ➀

= 160V ,V =0V

DSS

DS GS

µA

—

= 160V,

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

6.8

100

-100

= 20V

= -20V

GSS

=12V, I = 12.5A

d(on)

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

FallTime

7.4

= 100V

= 100V, I = 12.5A,

100

=12V, R = 7.5Ω

GS G

d(off)

+ L

Total Inductance

—

Measured from drain lead (6mm/

0.25in. from package) to source

lead (6mm/0.25in. from package)

Input Capacitance

Output Capacitance

—

1043

190

—

= 0V, V

= 25V

iss

oss

rss

f = 1.0MHz

Reverse Transfer Capacitance

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

Diode Forward Voltage

—

12.5

1.2

343

T = 25°C, I = 12.5A, V

= 0V ➀

Reverse Recovery Time

T = 25°C, I = 12.5A, di/dt ≥ 100A/µs

Reverse Recovery Charge

2.25 µC

≤ 25V ➀

Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

—

1.67

thJC

thJA

°C/W

Junction-to-Ambient

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

www.irf.com

123 4 5 6 7 8

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