IRHQ3214

更新时间： 2024-11-24 03:36:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	128K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)

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IRHQ3214 数据手册

PD - 93828A

IRHQ7214

250V, QUAD N-CHANNEL

RAD-Hard^™HEXFET^®

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (LCC-28)

MOSFET TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHQ7214

IRHQ3214

IRHQ4214

100K Rads (Si)

300K Rads (Si)

600K Rads (Si)

2.25Ω

1.6A

IRHQ8214 1000K Rads (Si) 2.25Ω

LCC-28

International Rectifier’s RAD-Hard^TMHEXFET^®MOSFET

technology provides high performance power MOSFETs

for space applications. This technology has over a de-

cade of proven performance and reliability in satellite ap-

plications. These devices have been characterized for

bothTotal Dose and Single Event Effects (SEE). The com-

bination of low RDS(on) and low gate charge reduces the

power losses in switching applications such as DC to DC

converters and motor control. These devices retain all of

the well established advantages of MOSFETs such as

voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Surface Mount

Light Weight

Pre-Irradiation

Absolute Maximum Ratings ( Per Die)

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

1.6

= 12V, T = 100°C Continuous Drain Current

1.0

6.4

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.1

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

1.6

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

1.2

V/ns

dv/dt

3.5

-55 to 150

^oC

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

0.89 (Typical)

For footnotes refer to the last page

www.irf.com

04/22/03

12 3 4 5 6 7 8

中文翻译

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与IRHQ3214相关器件

型号	品牌	获取价格	描述	数据表
IRHQ3214PBF	INFINEON	获取价格	Power Field-Effect Transistor, 1.6A I(D), 250V, 2.25ohm, 4-Element, N-Channel, Silicon, Me
IRHQ4110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ4110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 3A I(D), 100V, 0.6ohm, 4-Element, N-Channel, Silicon, Metal
IRHQ4214	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ53110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28), 100V, Quad N-CHANNEL
IRHQ53110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 4.6A I(D), 100V, 0.31ohm, 4-Element, N-Channel, Silicon, Me
IRHQ53110SCV	INFINEON	获取价格	Power Field-Effect Transistor,
IRHQ54110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28), 100V, Quad N-CHANNEL
IRHQ54110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 4.6A I(D), 100V, 0.31ohm, 4-Element, N-Channel, Silicon, Me
IRHQ563110	INFINEON	获取价格	RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)

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