是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | LCC |
包装说明: | CHIP CARRIER, R-CQCC-N28 | 针数: | 28 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.38 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 雪崩能效等级(Eas): | 62 mJ |
配置: | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (ID): | 1.6 A | 最大漏源导通电阻: | 2.25 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CQCC-N28 |
元件数量: | 4 | 端子数量: | 28 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 6.4 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHQ3214PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 1.6A I(D), 250V, 2.25ohm, 4-Element, N-Channel, Silicon, Me | |
IRHQ4110 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) | |
IRHQ4110PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 100V, 0.6ohm, 4-Element, N-Channel, Silicon, Metal | |
IRHQ4214 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) | |
IRHQ53110 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28), 100V, Quad N-CHANNEL | |
IRHQ53110PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.6A I(D), 100V, 0.31ohm, 4-Element, N-Channel, Silicon, Me | |
IRHQ53110SCV | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
IRHQ54110 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28), 100V, Quad N-CHANNEL | |
IRHQ54110PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.6A I(D), 100V, 0.31ohm, 4-Element, N-Channel, Silicon, Me | |
IRHQ563110 | INFINEON |
获取价格 |
RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28) |