5秒后页面跳转
捷配首页

Datasheet > IRHNA63260
IRHNA63260 PDF预览

IRHNA63260

更新时间： 2024-09-15 04:23:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 141K
描述
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)

阅读下载

中文翻译

获取价格

IRHNA63260 数据手册

 浏览型号IRHNA63260的Datasheet PDF文件第2页浏览型号IRHNA63260的Datasheet PDF文件第3页浏览型号IRHNA63260的Datasheet PDF文件第4页浏览型号IRHNA63260的Datasheet PDF文件第5页浏览型号IRHNA63260的Datasheet PDF文件第6页浏览型号IRHNA63260的Datasheet PDF文件第7页 
PD-94342D  
RADIATION HARDENED  
POWER MOSFET  
SURFACE-MOUNT (SMD-2)  
IRHNA67260  
200V, N-CHANNEL  
TECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHNA67260 100K Rads (Si) 0.028Ω 56A∗  
IRHNA63260 300K Rads (Si) 0.028Ω 56A∗  
SMD-2  
International Rectifier’s R6TM technology provides  
superior power MOSFETs for space applications.  
These devices have improved immunity to Single  
Event Effect (SEE) and have been characterized for  
useful performance with Linear Energy Transfer  
(LET) up to 90MeV/(mg/cm2).  
Features:  
n
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Their combination of very low R  
and faster  
DS(on)  
switching times reduces power loss and increases  
power density in today’s high speed switching  
applications such as DC-DC converters and motor  
controllers. These devices retain all of the well  
established advantages of MOSFETs such as voltage  
control, ease of paralleling and temperature stability  
of electrical parameters.  
Ceramic Package  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
= 12V, T = 25°C Continuous Drain Current  
Units  
I
D
@ V  
56∗  
GS  
C
A
I
@ V  
= 12V, T = 100°C Continuous Drain Current  
40  
224  
D
GS  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
250  
W
W/°C  
V
D
C
2.0  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
268  
56∗  
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
25  
mJ  
V/ns  
AR  
dv/dt  
5.0  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
3.3 (Typical)  
∗ Current is limited by Package  
For footnotes refer to the last page  
www.irf.com  
1
02/16/06  
12345678

中文翻译

下载PDF

与IRHNA63260相关器件

型号 品牌 获取价格 描述 数据表
IRHNA63264 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)
IRHNA67160 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2), 100V, N-CHANNEL
IRHNA67160PBF INFINEON

获取价格

 		Power Field-Effect Transistor, 56A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Met
IRHNA67160SCS INFINEON

获取价格

 		Power Field-Effect Transistor, 56A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Met
IRHNA67160SCSD INFINEON

获取价格

 		Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA67160SCV INFINEON

获取价格

 		Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA67164 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)
IRHNA67164SCS INFINEON

获取价格

 		Rad hard, 150V, 49A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA67164SCSD INFINEON

获取价格

 		Rad hard, 150V, 49A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA67164SCV INFINEON

获取价格

 		Rad hard, 150V, 49A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)

与IRHNA63260相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证