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IRG4CC20MB PDF预览

IRG4CC20MB

更新时间: 2024-09-26 23:58:55
品牌 Logo 应用领域
其他 - ETC 晶体晶体管双极性晶体管
页数 文件大小 规格书
1页 30K
描述
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | CHIP

IRG4CC20MB 数据手册

  
PD- 94049  
IRG4CC20MB  
IRG4CC20MB IGBT Die in Wafer Form  
C
600 V  
Size 2  
Fast-Speed,  
Short Circuit Rated  
6" Wafer  
G
E
Electrical Characteristics ( Wafer Form )  
Parameter  
VCE (on)  
V(BR)CES  
VGE(th)  
ICES  
Description  
Guaranteed (Min/Max)  
Test Conditions  
IC = 3.25A, TJ = 25°C, VGE = 15V  
TJ = 25°C, ICES = 250µA, VGE = 0V  
VGE = VCE , TJ =25°C, IC =250µA  
TJ = 25°C, VCE = 600V  
Collector-to-EmitterSaturationVoltage  
Colletor-to-Emitter Breakdown Voltage  
Gate Threshold Voltage  
1.6V Max.  
600V Min.  
4.0V Min., 6.5V Max.  
100µA Max.  
Zero Gate Voltage Collector Current  
Gate-to-Emitter Leakage Current  
IGES  
± 1.1µA Max.  
TJ = 25°C, VGE = +/- 20V  
Mechanical Data  
Nominal Backmetal Composition, Thickness:  
Nominal Front Metal Composition, Thickness:  
Dimensions:  
Cr-NiV-Ag (1 kA-2kA-2.5kA )  
99% Al, 1% Si (4 microns)  
.107" x .134"  
Wafer Diameter:  
150mm, with std. < 100 > flat  
.015" + / -.003"  
Wafer thickness:  
Relevant Die Mechanical Dwg. Number  
Minimum Street Width  
01-5239  
100 Microns  
Reject Ink Dot Size  
0.25mm Diameter Minimum  
Consistent throughout same wafer lot  
Store in original container, in dessicated  
nitrogen, with no contamination  
For optimum electrical results, die attach  
temperature should not exceed 300C  
Ink Dot Location  
Recommended Storage Environment:  
Recommended Die Attach Conditions  
Die Outline  
12/4/00  
www.irf.com  

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