Datasheet > IRG4CC20RB

IRG4CC20RB

更新时间： 2024-09-26 23:58:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管电动机控制双极性晶体管
页数	文件大小	规格书
1页	30K
描述
TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| CHIP

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数据手册

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IRG4CC20RB 数据手册

PD-93974

IRG4CC20RB

IRG4CC20RB IGBT Die in Wafer Form

600 V

Size 2

Standard-Speed,

Short Circuit Rated

6" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

V_{CE (on)}

V_(BR)CES

V_GE(th)

I_CES

Description

Guaranteed (Min/Max)

Test Conditions

I_C= 3.25A, T_J= 25°C, V_GE= 15V

T_J= 25°C, I_CES= 250µA, V_GE= 0V

V_GE= V_CE, T_J=25°C, I_C=250µA

T_J= 25°C, V_CE= 600V

Collector-to-Emitter Saturation Voltage

Colletor-to-Emitter Breakdown Voltage

Gate Threshold Voltage

1.4V Max.

600V Min.

4.0V Min., 6.5V Max.

100µA Max.

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

I_GES

± 1.1µA Max.

T_J= 25°C, V_GE= +/- 20V

Mechanical Data

Nominal Backmetal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Cr-NiV-Ag (1 kA-2kA-2.5kA )

99% Al, 1% Si (4 microns)

.107" x .134"

Wafer Diameter:

150mm, with std. < 100 > flat

.015" + / -.003"

Wafer thickness:

Relevant Die Mechanical Dwg. Number

Minimum Street Width

01-5239

100 Microns

Reject Ink Dot Size

0.25mm Diameter Minimum

Consistent throughout same wafer lot

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300C

Ink Dot Location

Recommended Storage Environment:

Recommended Die Attach Conditions

Die Outline

9/8/00

www.irf.com

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