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IRG4CC20UB PDF预览

IRG4CC20UB

更新时间: 2024-11-01 23:58:55
品牌 Logo 应用领域
其他 - ETC 晶体晶体管功率控制
页数 文件大小 规格书
1页 38K
描述

IRG4CC20UB 数据手册

  
PD- 91757  
IRG4CC20UB  
IRG4CC20UB IGBT Die in Wafer Form  
C
600 V  
Size 2  
Ultra-Fast Speed  
6" Wafer  
G
E
Electrical Characteristics ( Wafer Form )  
Parameter  
VCE (on)  
V(BR)CES  
VGE(th)  
ICES  
Description  
Guaranteed (Min/Max)  
Test Conditions  
IC = 10A, TJ = 25°C, VGE = 15V  
TJ = 25°C, ICES = 250µA, VGE = 0V  
VGE = VCE , TJ =25°C, IC =250µA  
TJ = 25°C, VCE = 600V  
Collector-to-Emitter Saturation Voltage  
Colletor-to-Emitter Breakdown Voltage  
Gate Threshold Voltage  
4.5V Max.  
600V Min.  
3.0V Min., 6.0V Max.  
300 µA Max.  
Zero Gate Voltage Collector Current  
Gate-to-Emitter Leakage Current  
IGES  
± 11µA Max.  
TJ = 25°C, VGE = +/- 20V  
Mechanical Data  
Norminal Backmetal Composition, Thickness:  
Norminal Front Metal Composition, Thickness:  
Dimensions:  
Cr-Ni / V-Ag (1 kA-2kA-2.5kA )  
99% Al, 1% Si (4 microns)  
0.107" x 0.134"  
Wafer Diameter:  
150mm, with std. < 100 > flat  
.015" + / -.003"  
Wafer thickness:  
Relevant Die Mechanical Dwg. Number  
Minimum Street Width  
01-5228  
100 Microns  
Reject Ink Dot Size  
0.25mm Diameter Minimum  
Consistent throughout same wafer lot  
Store in original container, in dessicated  
nitrogen, with no contamination  
For optimum electrical results, die attach  
temperature should not exceed 300C  
Ink Dot Location  
Recommended Storage Environment:  
Recommended Die Attach Conditions  
Reference Standard IR packaged part ( for design ) : IRG4BC20U  
Die Outline  
9/24/98  

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