Datasheet > IRG4CC30UB

IRG4CC30UB

更新时间： 2024-09-26 23:58:55

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描述

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中文翻译

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数据手册

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IRG4CC30UB 数据手册

PD-91771

IRG4CC30UB

IRG4CC30UB IGBT Die in Wafer Form

600 V

Size 3

Ultra-Fast Speed

6" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

V_{CE (on)}

V_(BR)CES

V_GE(th)

I_CES

Description

Guaranteed (Min/Max)

Test Conditions

I_C= 10A, T_J= 25°C, V_GE= 15V

T_J= 25°C, I_CES= 250µA, V_GE= 0V

V_GE= V_CE, T_J=25°C, I_C=250µA

T_J= 25°C, V_CE= 600V

Collector-to-Emitter Saturation Voltage

Colletor-to-Emitter Breakdown Voltage

Gate Threshold Voltage

4.5V Max.

600V Min.

3.0V Min., 6.0V Max.

300 µA Max.

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

I_GES

± 11µA Max.

T_J= 25°C, V_GE= +/- 20V

Mechanical Data

Norminal Backmetal Composition, Thickness:

Norminal Front Metal Composition, Thickness:

Dimensions:

Cr-Ni / V-Ag (1 kA-2kA-2.5kA )

99% Al, 1% Si (3 microns)

0.141" x 0.164"

Wafer Diameter:

150mm, with std. < 100 > flat

.015" + / -.003"

Wafer thickness:

Relevant Die Mechanical Dwg. Number

Minimum Street Width

01-5225

100 Microns

Reject Ink Dot Size

0.25mm Diameter Minimum

Consistent throughout same wafer lot

Store in original container, in dessicated

nitrogen, with no contamination

Ink Dot Location

Recommended Storage Environment:

Reference Standard IR packaged part ( for design ) : IRG4BC30U

Die Outline

10/2/98

中文翻译

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