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IRG4CC40RB PDF预览

IRG4CC40RB

更新时间: 2024-11-01 23:58:55
品牌 Logo 应用领域
其他 - ETC 晶体晶体管电动机控制双极性晶体管
页数 文件大小 规格书
1页 45K
描述
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | CHIP

IRG4CC40RB 数据手册

  
PD-91875  
IRG4CC81KB  
IRG4CC81KB IGBT Die in Wafer Form  
C
600 V  
Size 8.1  
Ultra-Fast Speed  
Short Circuit Rated  
6" Wafer  
G
E
Electrical Characteristics ( Wafer Form )  
Parameter  
VCE (on)  
V(BR)CES  
VGE(th)  
ICES  
Description  
Guaranteed (Min/Max)  
Test Conditions  
IC = 10A, TJ = 25°C, VGE = 15V  
TJ = 25°C, ICES = 250µA, VGE = 0V  
VGE = VCE , TJ =25°C, IC = 1.0mA  
TJ = 25°C, VCE = 600V  
Collector-to-Emitter Saturation Voltage  
Colletor-to-Emitter Breakdown Voltage  
Gate Threshold Voltage  
4.5V Max.  
600V Min.  
3.0V Min., 6.5V Max.  
200 µA Max.  
Zero Gate Voltage Collector Current  
Gate-to-Emitter Leakage Current  
IGES  
± 11 µA Max.  
TJ = 25°C, VGE = +/- 20V  
Mechanical Data  
Nominal Backmetal Composition, Thickness:  
Nominal Front Metal Composition, Thickness:  
Dimensions:  
Cr-NiV-Ag ( 1kA°-2kA°-2.5kA° )  
99% Al, 1% Si (4 microns)  
.523" x .523"  
Wafer Diameter:  
150mm, with std. < 100 > flat  
.015" + / -.003"  
Wafer thickness:  
Relevant Die Mechanical Dwg. Number  
Minimum Street Width  
01-5351  
100 Microns  
Reject Ink Dot Size  
0.25mm Diameter Minimum  
Consistent throughout same wafer lot  
Store in original container, in dessicated  
nitrogen, with no contamination  
For optimum electrical results, die attach  
temperature should not exceed 300C  
Ink Dot Location  
Recommended Storage Environment:  
Recommended Die Attach Conditions  
Reference Standard IR packaged part ( for design ) : N/A  
Die Outline  
3/25/99  

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