Datasheet > IRG4CC30SB

IRG4CC30SB

更新时间： 2024-11-01 23:58:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管双极性晶体管
页数	文件大小	规格书
1页	50K
描述
TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| CHIP

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中文翻译

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数据手册

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IRG4CC30SB 数据手册

PD-91760

IRG4CC30SB

IRG4CC30SB IGBT Die in Wafer Form

600 V

Size 3

Standard Speed

6" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

V_{CE (on)}

V_(BR)CES

V_GE(th)

I_CES

Description

Guaranteed (Min/Max)

Test Conditions

I_C= 10A, T_J= 25°C, V_GE= 15V

T_J= 25°C, I_CES= 250µA, V_GE= 0V

V_GE= V_CE, T_J=25°C, I_C=250µA

T_J= 25°C, V_CE= 600V

Collector-to-Emitter Saturation Voltage

Colletor-to-Emitter Breakdown Voltage

Gate Threshold Voltage

4.5V Max.

600V Min.

3.0V Min., 6.0V Max.

300 µA Max.

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

I_GES

± 11µA Max.

T_J= 25°C, V_GE= +/- 20V

Mechanical Data

Nominal Backmetal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Cr-Ni / V-Ag (1 kA-2kA-2.5kA )

99% Al, 1% Si (4 microns)

0.141" x 0.164"

Wafer Diameter:

150mm, with std. < 100 > flat

.015" + / -.003"

Wafer thickness:

Relevant Die Mechanical Dwg. Number

MinimumStreetWidth

01-5225

100 Microns

Reject Ink Dot Size

0.25mmDiameterMinimum

Consistent throughout same wafer lot

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300C

Ink Dot Location

Recommended Storage Environment:

Recommended Die Attach Conditions

Reference Standard IR packaged part ( for design ) : IRG4BC30S

Die Outline

9/24/98

中文翻译

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