生命周期: | Active | 零件包装代码: | TO-257AB |
包装说明: | FLANGE MOUNT, S-MSFM-P3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.09 | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 5.3 A | 最大漏源导通电阻: | 0.69 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-257AB |
JESD-30 代码: | S-MSFM-P3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | METAL | 封装形状: | SQUARE |
封装形式: | FLANGE MOUNT | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFY9120M | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 5.3A I(D) | TO-220 | |
IRFY9120MPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 5.3A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met | |
IRFY9130 | SEME-LAB |
获取价格 |
P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS | |
IRFY9130C | INFINEON |
获取价格 |
POWER MOSFET THRU-HOLE (TO-257AA)100V, P-CHAN | |
IRFY9130C | SEME-LAB |
获取价格 |
P-Channel MOSFET in a Hermetically sealed | |
IRFY9130CM | INFINEON |
获取价格 |
POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.3ohm, Id=-11.2A) | |
IRFY9130CMPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 11.2A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Me | |
IRFY9130CMSCV | INFINEON |
获取价格 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package - Screening Level TXV | |
IRFY9130CMSCX | INFINEON |
获取价格 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package - Screening Level TX | |
IRFY9130CSCS | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9.3A I(D), 100V, 0.31ohm, 1-Element, P-Channel, Silicon, Me |