5秒后页面跳转
IRFY9120C PDF预览

IRFY9120C

更新时间: 2024-11-24 11:09:55
品牌 Logo 应用领域
SEME-LAB 晶体晶体管局域网
页数 文件大小 规格书
1页 15K
描述
P-Channel MOSFET in a Hermetically sealed

IRFY9120C 技术参数

生命周期:Active零件包装代码:TO-257AB
包装说明:FLANGE MOUNT, S-MSFM-P3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.09外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:100 V
最大漏极电流 (ID):5.3 A最大漏源导通电阻:0.69 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-257AB
JESD-30 代码:S-MSFM-P3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:METAL封装形状:SQUARE
封装形式:FLANGE MOUNT极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:PIN/PEG端子位置:SINGLE
晶体管元件材料:SILICONBase Number Matches:1

IRFY9120C 数据手册

  
IRFY9120C  
Dimensions in mm (inches).  
P-Channel MOSFET in  
10.6 (0.42)  
4.6 (0.18)  
0.8  
a Hermetically sealed  
(0.03)  
TO257AB Metal Package.  
3.70Dia. Nom  
1
2
3
VDSS = 100V  
ID = 5.3A  
RDS(ON) = 0.69  
All Semelab hermetically sealed products can be  
processed in accordance with the requirements  
of BS, CECC and JAN, JANTX, JANTXV and  
JANS specifications.  
1.0  
(0.039)  
2.54 (0.1)  
BSC  
2.70  
(0.106)  
TO257AB (TO220M)  
PINOUTS  
1 – Gate  
2 – Drain  
Case – Source  
Parameter  
Min.  
Typ.  
Max.  
100  
5.3  
Units  
V
VDSS  
ID  
Drain – Source Breakdown Voltage  
Continuous Drain Current  
Power Dissipation  
A
PD  
30  
W
RDS(ON)  
CISS  
Qg  
Static Drain – Source On–State Resistance  
Input Capacitance  
0.69  
380  
pF  
nC  
ns  
ns  
ns  
ns  
Total Gate Charge  
16.3  
60  
ttd(on)  
ttr  
ttd(off)  
tf  
Turn–On Delay Time  
Rise Time  
100  
50  
Turn–Off Delay Time  
Fall Time  
70  
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.  
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Semelab plc.  
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Generated  
13-Sep-02  

与IRFY9120C相关器件

型号 品牌 获取价格 描述 数据表
IRFY9120M ETC

获取价格

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 5.3A I(D) | TO-220
IRFY9120MPBF INFINEON

获取价格

Power Field-Effect Transistor, 5.3A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met
IRFY9130 SEME-LAB

获取价格

P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
IRFY9130C INFINEON

获取价格

POWER MOSFET THRU-HOLE (TO-257AA)100V, P-CHAN
IRFY9130C SEME-LAB

获取价格

P-Channel MOSFET in a Hermetically sealed
IRFY9130CM INFINEON

获取价格

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.3ohm, Id=-11.2A)
IRFY9130CMPBF INFINEON

获取价格

Power Field-Effect Transistor, 11.2A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Me
IRFY9130CMSCV INFINEON

获取价格

-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package - Screening Level TXV
IRFY9130CMSCX INFINEON

获取价格

-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package - Screening Level TX
IRFY9130CSCS INFINEON

获取价格

Power Field-Effect Transistor, 9.3A I(D), 100V, 0.31ohm, 1-Element, P-Channel, Silicon, Me