Datasheet > IRFY9140CSCV

IRFY9140CSCV

更新时间： 2024-11-25 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	838K
描述
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package - Lead Trimmed Screening Level TXV

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IRFY9140CSCV 数据手册

PD-91294E

IRFY9140C, IRFY9140CM

100V, P-CHANNEL

HEXFET MOSFET TECHNOLOGY

POWER MOSFET

THRU-HOLE (TO-257AA)

Product Summary

Part Number

RDS(on)

I_D

Eyelets

IRFY9140C

-15.8A

Ceramic

0.20

IRFY9140CM

-15.8A

Ceramic

0.20

TO-257AA

Description

Features

HEXFET MOSFET technology is the key to IR HiRel

advanced line of power MOSFET transistors. The efficient

geometry design achieves very low on-state resistance

combined with high trans conductance. HEXFET transistors also

feature all of the well-established advantages of MOSFETs, such

as voltage control, very fast switching, ease of paralleling

and electrical parameter temperature stability. They are

well-suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio amplifiers,

high energy pulse circuits, and virtually any application

where high reliability is required. The HEXFET transistor’s

totally isolated package eliminates the need for additional

isolating material between the device and the heat sink.

This improves thermal efficiency and reduces drain capacitance.

 Simple Drive Requirements

 Ease of Paralleling

 Hermetically Sealed

 Electrically Isolated

 Ceramic Eyelets

 Ideally Suited For Space Level Applications

 ESD Rating: Class 2 per MIL-STD-750, Method 1020

Absolute Maximum Ratings

Parameter

Units

I_D@ V_GS= -10V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= -10V, T_C= 100°C Continuous Drain Current

-15.8

-10

-60

I_DM

Pulsed Drain Current 

P_D@T_C= 25°C

Maximum Power Dissipation

100

W/°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

0.8

V_GS

E_AS

I_AR

± 20

640

-15.8

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

V/ns

-5.5

-55 to + 150

T_STG

°C

300 (0.063 in/1.6mm from case for 10sec)

4.3 (Typical)

Weight

For Footnotes refer to the page 2.

2016-09-21

12 3 4 5 6 7

中文翻译

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与IRFY9140CSCV相关器件

型号	品牌	获取价格	描述	数据表
IRFY9140CSCVPBF	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 100V, 0.21ohm, 1-Element, P-Channel, Silicon, Met
IRFY9140CSCXPBF	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 100V, 0.21ohm, 1-Element, P-Channel, Silicon, Met
IRFY9140M	INFINEON	获取价格	POWER MOSFET THRU-HOLE (TO-257AA)
IRFY9140ME	INFINEON	获取价格	暂无描述
IRFY9140MEA	INFINEON	获取价格	暂无描述
IRFY9140MEAPBF	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Met
IRFY9140MEB	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Met
IRFY9140MEBPBF	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Met
IRFY9140MEC	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Met
IRFY9140MECPBF	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Met

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