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IRFY9140CMSCV

更新时间： 2024-11-25 14:56:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 838K
描述
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package - Screening Level TXV

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IRFY9140CMSCV 技术参数

生命周期：Active包装说明：FLANGE MOUNT, S-XSFM-P3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.62其他特性：HIGH RELIABILITY
雪崩能效等级（Eas）：640 mJ外壳连接：ISOLATED
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (ID)：15.8 A最大漏源导通电阻：0.2 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-257AA
JESD-30 代码：S-XSFM-P3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：UNSPECIFIED封装形状：SQUARE
封装形式：FLANGE MOUNT极性/信道类型：P-CHANNEL
最大脉冲漏极电流 (IDM)：60 A表面贴装：NO
端子形式：PIN/PEG端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRFY9140CMSCV 数据手册

 浏览型号IRFY9140CMSCV的Datasheet PDF文件第2页浏览型号IRFY9140CMSCV的Datasheet PDF文件第3页浏览型号IRFY9140CMSCV的Datasheet PDF文件第4页浏览型号IRFY9140CMSCV的Datasheet PDF文件第5页浏览型号IRFY9140CMSCV的Datasheet PDF文件第6页浏览型号IRFY9140CMSCV的Datasheet PDF文件第7页 
PD-91294E  
IRFY9140C, IRFY9140CM  
100V, P-CHANNEL  
HEXFET MOSFET TECHNOLOGY  
POWER MOSFET  
THRU-HOLE (TO-257AA)  
Product Summary  
Part Number  
RDS(on)  
ID  
Eyelets  
IRFY9140C  
-15.8A  
Ceramic  
0.20  
IRFY9140CM  
-15.8A  
Ceramic  
0.20  
Description  
Features  
HEXFET MOSFET technology is the key to IR HiRel  
advanced line of power MOSFET transistors. The efficient  
geometry design achieves very low on-state resistance  
combined with high trans conductance. HEXFET transistors also  
feature all of the well-established advantages of MOSFETs, such  
as voltage control, very fast switching, ease of paralleling  
and electrical parameter temperature stability. They are  
well-suited for applications such as switching power  
supplies, motor controls, inverters, choppers, audio amplifiers,  
high energy pulse circuits, and virtually any application  
where high reliability is required. The HEXFET transistor’s  
totally isolated package eliminates the need for additional  
isolating material between the device and the heat sink.  
This improves thermal efficiency and reduces drain capacitance.  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Ceramic Eyelets  
Ideally Suited For Space Level Applications  
ESD Rating: Class 2 per MIL-STD-750, Method 1020  
Absolute Maximum Ratings  
Parameter  
Units  
ID @ VGS = -10V, TC = 25°C Continuous Drain Current  
ID @ VGS = -10V, TC = 100°C Continuous Drain Current  
-15.8  
A
-10  
-60  
IDM  
Pulsed Drain Current  
PD @TC = 25°C  
Maximum Power Dissipation  
100  
W
W/°C  
V
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
0.8  
VGS  
EAS  
IAR  
± 20  
640  
mJ  
A
-15.8  
10  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
mJ  
V/ns  
-5.5  
-55 to + 150  
TSTG  
°C  
g
300 (0.063 in/1.6mm from case for 10sec)  
4.3 (Typical)  
Weight  
For Footnotes refer to the page 2.  
1
2016-09-21  
1234567

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 		Power Field-Effect Transistor, 13A I(D), 100V, 0.21ohm, 1-Element, P-Channel, Silicon, Met
IRFY9140CSCXPBF INFINEON

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 		Power Field-Effect Transistor, 13A I(D), 100V, 0.21ohm, 1-Element, P-Channel, Silicon, Met
IRFY9140M INFINEON

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 		POWER MOSFET THRU-HOLE (TO-257AA)
IRFY9140ME INFINEON

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 		暂无描述
IRFY9140MEA INFINEON

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