Datasheet > IRFY9140CPBF

IRFY9140CPBF

更新时间： 2024-11-24 20:10:51

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
7页	279K
描述
Power Field-Effect Transistor, 15.8A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN

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IRFY9140CPBF 数据手册

PD - 94197C

IRFY9140, IRFY9140M

100V, P-CHANNEL

POWER MOSFET

THRU-HOLE (TO-257AA)

HEXFET^®MOSFET TECHNOLOGY

Product Summary

Part Number RDS(on)

Eyelets

Glass

IRFY9140

0.20 Ω

-15.8A

IRFY9140M

Glass

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state

resistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advantages

of MOSFETs, such as voltage control, very fast switching,

ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as

switching power supplies, motor controls, inverters,

choppers, audio amplifiers, high energy pulse circuits, and

virtually any application where high reliability is required.

The HEXFET transistor’s totally isolated package eliminates

the need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

TO-257AA

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Glass Eyelets

For Space Level Applications

Refer to Ceramic Version Part

Numbers IRFY9140C, IRFY9140CM

Absolute Maximum Ratings

Parameter

Units

@ V

= -10V, T = 25°C Continuous Drain Current

-15.8

= -10V, T = 100°C Continuous Drain Current

-10

-60

Pulsed Drain Current À

Max. Power Dissipation

@ T = 25°C

100

W/°C

Linear Derating Factor

0.8

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

640

-15.8

dv/dt

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

-5.5

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300(0.063in./1.6mm from case for 10 sec)

4.3 (Typical)

For footnotes refer to the last page

www.irf.com

01/18/07

12 3 4 5 6 7

中文翻译

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与IRFY9140CPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFY9140CSCSPBF	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 100V, 0.21ohm, 1-Element, P-Channel, Silicon, Met
IRFY9140CSCV	INFINEON	获取价格	-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package - Lead Trimmed Screening Level
IRFY9140CSCVPBF	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 100V, 0.21ohm, 1-Element, P-Channel, Silicon, Met
IRFY9140CSCXPBF	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 100V, 0.21ohm, 1-Element, P-Channel, Silicon, Met
IRFY9140M	INFINEON	获取价格	POWER MOSFET THRU-HOLE (TO-257AA)
IRFY9140ME	INFINEON	获取价格	暂无描述
IRFY9140MEA	INFINEON	获取价格	暂无描述
IRFY9140MEAPBF	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Met
IRFY9140MEB	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Met
IRFY9140MEBPBF	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Met

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