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IRFY9140MEA

更新时间： 2024-11-24 13:00:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 280K
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中文翻译

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IRFY9140MEA 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.62外壳连接：ISOLATED
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (ID)：13 A最大漏源导通电阻：0.24 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-257AB
JESD-30 代码：S-MSFM-P3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：METAL封装形状：SQUARE
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：P-CHANNEL最大脉冲漏极电流 (IDM)：52 A
认证状态：Not Qualified参考标准：CECC
表面贴装：NO端子形式：PIN/PEG
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRFY9140MEA 数据手册

 浏览型号IRFY9140MEA的Datasheet PDF文件第2页浏览型号IRFY9140MEA的Datasheet PDF文件第3页浏览型号IRFY9140MEA的Datasheet PDF文件第4页浏览型号IRFY9140MEA的Datasheet PDF文件第5页浏览型号IRFY9140MEA的Datasheet PDF文件第6页浏览型号IRFY9140MEA的Datasheet PDF文件第7页 
PD - 94197C  
IRFY9140, IRFY9140M  
100V, P-CHANNEL  
POWER MOSFET  
THRU-HOLE (TO-257AA)  
HEXFET® MOSFET TECHNOLOGY  
Product Summary  
Part Number RDS(on)  
ID  
Eyelets  
Glass  
IRFY9140  
0.20 Ω  
0.20 Ω  
-15.8A  
-15.8A  
IRFY9140M  
Glass  
HEXFET® MOSFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors.  
The efficient geometry design achieves very low on-state  
resistance combined with high transconductance. HEXFET  
transistors also feature all of the well-established advantages  
of MOSFETs, such as voltage control, very fast switching,  
ease of paralleling and electrical parameter temperature  
stability. They are well-suited for applications such as  
switching power supplies, motor controls, inverters,  
choppers, audio amplifiers, high energy pulse circuits, and  
virtually any application where high reliability is required.  
The HEXFET transistor’s totally isolated package eliminates  
the need for additional isolating material between the device  
and the heatsink. This improves thermal efficiency and  
reduces drain capacitance.  
TO-257AA  
Features:  
n
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Glass Eyelets  
For Space Level Applications  
Refer to Ceramic Version Part  
Numbers IRFY9140C, IRFY9140CM  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= -10V, T = 25°C Continuous Drain Current  
-15.8  
D
D
GS  
GS  
C
A
I
= -10V, T = 100°C Continuous Drain Current  
-10  
-60  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
100  
W
W/°C  
V
D
C
Linear Derating Factor  
0.8  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
640  
mJ  
A
AS  
I
-15.8  
10  
AR  
E
AR  
dv/dt  
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
mJ  
V/ns  
-5.5  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300(0.063in./1.6mm from case for 10 sec)  
4.3 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
01/18/07  
1234567

中文翻译

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与IRFY9140MEA相关器件

型号 品牌 获取价格 描述 数据表
IRFY9140MEAPBF INFINEON

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 		Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Met
IRFY9140MEB INFINEON

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 		Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Met
IRFY9140MEBPBF INFINEON

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 		Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Met
IRFY9140MEC INFINEON

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 		Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Met
IRFY9140MECPBF INFINEON

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 		Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Met
IRFY9140MED INFINEON

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 		Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Met
IRFY9140MEDPBF INFINEON

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 		Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Met
IRFY9140MEPBF INFINEON

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 		Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Met
IRFY9140X SEME-LAB

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 		P-Channel MOSFET in a Hermetically sealed
IRFY9230 SEME-LAB

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 		P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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