IRFY9240ME

更新时间： 2024-11-05 13:00:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
6页	241K
描述
Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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Provisional Data Sheet No. PD 9.1295A

IRFY9240CM

HEXFET^®POWERMOSFET

P-CHANNEL

-200Volt, 0.51Ω HEXFET

Product Summary

International Rectifier’s HEXFET technology is the key to

its advanced line of power MOSFET transistors.The effi-

cient geometry design achieves very low on-state resis-

tance combined with high transconductance.

Part Number

DSS

DS(on)

IRFY9240CM

-200V

0.51Ω

-9.4A

Features

HEXFET power MOSFETs also feature all of the well-

established advantages of MOSFETs, such as voltage

control, very fast switching, ease of paralleling and electri-

cal parameter temperature stability.They are well-suited

for applications such as switching power supplies, motor

controls, inverters, choppers, audio amplifiers, high en-

ergy pulse circuits, and virtually any application where

high reliability is required.

n Hermetically Sealed

n Electrically Isolated

n Simple Drive Requirements

n Ease of Paralleling

The HEXFET power MOSFET’s totally isolated package

eliminates the need for additional isolating material between

the device and the heatsink.This improves thermal effi-

ciency and reduces drain capacitance.

Absolute Maximum Ratings

Parameter

IRFY9240CM

Units

@ V = -10V, T = 25°C

Continuous Drain Current

-9.4

-6.0

@ V = -10V, T = 100°C Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

-36

@ T = 25°C

100

W/Kꢀ

0.8

Gate-to-Source Voltage

Single Pulse Avalance Energy

Avalance Current

±20

700

-9.4

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

V/ns

dv/dt

-5.5

-55 to 150

Storage Temperature Range

°C

stg

LeadTemperature

Weight

300 (0.063 in (1.6mm) from case for 10 sec)

4.3(typical)

* I_Dcurrent limited by pin diameter

To Order

12 3 4 5 6

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与IRFY9240ME相关器件

型号	品牌	获取价格	描述	数据表
IRFY9240MEA	INFINEON	获取价格	暂无描述
IRFY9240MEAPBF	INFINEON	获取价格	Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Me
IRFY9240MEB	INFINEON	获取价格	暂无描述
IRFY9240MEBPBF	INFINEON	获取价格	暂无描述
IRFY9240MEC	INFINEON	获取价格	暂无描述
IRFY9240MECPBF	INFINEON	获取价格	暂无描述
IRFY9240MED	INFINEON	获取价格	Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Me
IRFY9240MEDPBF	INFINEON	获取价格	Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Me
IRFY9240MEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Me
IRFY9240MPBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.4A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Me