Datasheet > IRFY9310F

IRFY9310F

更新时间： 2024-09-22 23:58:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管脉冲局域网
页数	文件大小	规格书
2页	24K
描述
TRANSISTOR \| MOSFET \| P-CHANNEL \| 400V V(BR)DSS \| TO-220VAR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFY9310F 数据手册

IRFY9310F

MECHANICAL DATA

Dimensions in mm (inches)

P–CHANNEL

POWER MOSFET

FOR HI–REL

4.50

4.81

10.40

10.80

0.75

0.95

APPLICATIONS

3.50

3.70

Dia.

V_DSS

400V

1.8A

7.0

1 2 3

I_D(cont)

R_DS(on)

➀

1.0 dia.

3 places

FEATURES

• HERMETICALLY SEALED TO–220 METAL

PACKAGE WITH FLEXIBLE LEADS

0.75

0.85

2.54

BSC

2.65

2.96

• SIMPLE DRIVE REQUIREMENTS

• LIGHTWEIGHT

• SCREENING OPTIONS AVAILABLE

• ALL LEADS ISOLATED FROM CASE

TO220 FLEX

PIN1 – Gate

PIN 2 – Drain

PIN 3 – Source

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

case

Gate – Source Voltage

Continuous Drain Current

±20V

(V = 0 , T

= 25°C)

1.1A

case

(V = 0 , T

= 100°C)

Pulsed Drain Current

7.2A

Power Dissipation @ T = 25°C

case

50W

Linear Derating Factor

0.4W/°C

–55 to 150°C

300°C

T , T

Operating and Storage Temperature Range

stg

Package Mounting Surface Temperature (for 5 sec)

Thermal Resistance Junction to Case

2.5°C/W max.

Notes

1) Pulse Test: Pulse Width 300ms,

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 9/00

中文翻译

下载PDF

与IRFY9310F相关器件

型号	品牌	获取价格	描述	数据表
IRFYB9130CM	INFINEON	获取价格	100V Single P-Channel Hermetic MOSFET in a TO-257AA Tabless Low Ohmic package -
IRFYB9130CMSCV	INFINEON	获取价格	100V Single P-Channel Hermetic MOSFET in a TO-257AA Tabless Low Ohmic package - Screening
IRFZ10	VISHAY	获取价格	Power MOSFET
IRFZ10	INFINEON	获取价格	HEXFETR POWER MOSFET
IRFZ10	SAMSUNG	获取价格	Power Field-Effect Transistor, 10A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal
IRFZ10	NJSEMI	获取价格	Trans MOSFET N-CH 60V 10A 3-Pin(3+Tab) TO-220AB
IRFZ10_11	VISHAY	获取价格	Power MOSFET
IRFZ10-001	INFINEON	获取价格	Power Field-Effect Transistor, 7.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ10-001PBF	INFINEON	获取价格	Power Field-Effect Transistor, 7.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ10-002	INFINEON	获取价格	Power Field-Effect Transistor, 7.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta