Datasheet > IRFYB9130CM

IRFYB9130CM

更新时间： 2024-09-24 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	1275K
描述
100V Single P-Channel Hermetic MOSFET in a TO-257AA Tabless Low Ohmic package -

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IRFYB9130CM 数据手册

PD-97896

IRFYB9130C, IRFYB9130CM

100V, P-CHANNEL

POWER MOSFET

HEXFET MOSFET TECHNOLOGY

THRU-HOLE (TO-257AA Low-Ohmic Tabless)

Product Summary

Part Number

RDS(on)

I_D

Eyelets

Pin-out

IRFYB9130C

-11.2A

Ceramic

Optional

0.30

IRFYB9130CM

-11.2A

Ceramic

Standard

0.30

TO-257AA

Low-Ohmic

Tabless

Description

IRFYB9130C is part of the International Rectifier HiRel

family of products. HEXFET MOSFET technology is the key

to IR HiRel advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state

resistance combined with high trans conductance. HEXFET

transistors also feature all of the well-established

advantages of MOSFETs, such as voltage control, very fast

switching, ease of paralleling and electrical parameter

temperature stability. They are well-suited for applications

such as switching power supplies, motor controls, inverters,

choppers, audio amplifiers, high energy pulse circuits, and

virtually any application where high reliability is required.

The HEXFET transistor’s totally isolated package

eliminates the need for additional isolating material

between the device and the heat sink. This improves

thermal efficiency and reduces drain capacitance.

Features

 Simple Drive Requirements

 Hermetically Sealed

 Electrically Isolated

 Ceramic Eyelets

 Ideally Suited For Space Level Applications

 ESD Rating: Class 1C per MIL-STD-750, Method 1020

Absolute Maximum Ratings

Symbol

Value

Parameter

Units

I_D@ V_GS= -10V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= -10V, T_C= 100°C Continuous Drain Current

-11.2

-7.1

-44

I_DM

Pulsed Drain Current 

P_D@T_C= 25°C

Maximum Power Dissipation

W/°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

0.6

V_GS

E_AS

I_AR

± 20

400

-11.2

7.5

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

V/ns

-5.5

-55 to + 150

T_STG

°C

300 (0.063 in/1.6mm from case for 10sec)

4.3 (Typical)

Weight

For Footnotes refer to the page 2.

2018-05-05

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7

中文翻译

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与IRFYB9130CM相关器件

型号	品牌	获取价格	描述	数据表
IRFYB9130CMSCV	INFINEON	获取价格	100V Single P-Channel Hermetic MOSFET in a TO-257AA Tabless Low Ohmic package - Screening
IRFZ10	VISHAY	获取价格	Power MOSFET
IRFZ10	INFINEON	获取价格	HEXFETR POWER MOSFET
IRFZ10	SAMSUNG	获取价格	Power Field-Effect Transistor, 10A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal
IRFZ10	NJSEMI	获取价格	Trans MOSFET N-CH 60V 10A 3-Pin(3+Tab) TO-220AB
IRFZ10_11	VISHAY	获取价格	Power MOSFET
IRFZ10-001	INFINEON	获取价格	Power Field-Effect Transistor, 7.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ10-001PBF	INFINEON	获取价格	Power Field-Effect Transistor, 7.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ10-002	INFINEON	获取价格	Power Field-Effect Transistor, 7.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ10-003	INFINEON	获取价格	Power Field-Effect Transistor, 7.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta

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