IRFY9240C

更新时间： 2024-11-30 05:39:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
7页	148K
描述
POWER MOSFET THRU-HOLE (TO-257AA

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中文翻译

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技术参数
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IRFY9240C 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.63	Base Number Matches：	1

IRFY9240C 数据手册

PD - 91295B

IRFY9240C,IRFY9240CM

200V, P-CHANNEL

POWER MOSFET

THRU-HOLE (TO-257AA)

HEXFET^®MOSFET TECHNOLOGY

Product Summary

Part Number Rds(on) Id

Eyelets

IRFY9240C

0.51 Ω

-9.4A

Ceramic

IRFY9240CM

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

TO-257AA

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Ceramic Eyelets

Ideally Suited For Space Level

Applications

Absolute Maximum Ratings

Parameter

Units

@ V

= -10V, T = 25°C Continuous Drain Current

-9.4

-6.0

= -10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

-36

@ T = 25°C

100

W/°C

Linear Derating Factor

0.8

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

700

-9.4

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

-5.5

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300(0.063in.(1.6mm)from case for 10 sec)

4.3 (Typical)

For footnotes refer to the last page

www.irf.com

4/18/01

12 3 4 5 6 7

中文翻译

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与IRFY9240C相关器件

型号	品牌	获取价格	描述	数据表
IRFY9240CM	INFINEON	获取价格	POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.51ohm, Id=-9.4A)
IRFY9240CMPBF	INFINEON	获取价格	9.4A, 200V, 0.51ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA, HERMETIC SEALED, TO-257AA, 3
IRFY9240CMSCX	INFINEON	获取价格	Power Field-Effect Transistor, 9.4A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Me
IRFY9240CMSCXPBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.4A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Me
IRFY9240CSCX	INFINEON	获取价格	-200V Single P-Channel Hi-Rel MOSFET in a TO-257AA package - Screening Level TX
IRFY9240EAPBF	INFINEON	获取价格	Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Me
IRFY9240EBPBF	INFINEON	获取价格	Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Me
IRFY9240ECPBF	INFINEON	获取价格	Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Me
IRFY9240ED	INFINEON	获取价格	Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Me
IRFY9240EPBF	INFINEON	获取价格	Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Me

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