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IRFY9140MEAPBF

更新时间： 2024-11-11 20:10:51
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
7页 279K
描述
Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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IRFY9140MEAPBF 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：FLANGE MOUNT, S-MSFM-P3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.62
外壳连接：ISOLATED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (ID)：13 A
最大漏源导通电阻：0.24 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-257ABJESD-30 代码：S-MSFM-P3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：METAL
封装形状：SQUARE封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260极性/信道类型：P-CHANNEL
最大脉冲漏极电流 (IDM)：52 A认证状态：Not Qualified
参考标准：CECC表面贴装：NO
端子形式：PIN/PEG端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRFY9140MEAPBF 数据手册

 浏览型号IRFY9140MEAPBF的Datasheet PDF文件第2页浏览型号IRFY9140MEAPBF的Datasheet PDF文件第3页浏览型号IRFY9140MEAPBF的Datasheet PDF文件第4页浏览型号IRFY9140MEAPBF的Datasheet PDF文件第5页浏览型号IRFY9140MEAPBF的Datasheet PDF文件第6页浏览型号IRFY9140MEAPBF的Datasheet PDF文件第7页 
PD - 94197C  
IRFY9140, IRFY9140M  
100V, P-CHANNEL  
POWER MOSFET  
THRU-HOLE (TO-257AA)  
HEXFET® MOSFET TECHNOLOGY  
Product Summary  
Part Number RDS(on)  
ID  
Eyelets  
Glass  
IRFY9140  
0.20 Ω  
0.20 Ω  
-15.8A  
-15.8A  
IRFY9140M  
Glass  
HEXFET® MOSFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors.  
The efficient geometry design achieves very low on-state  
resistance combined with high transconductance. HEXFET  
transistors also feature all of the well-established advantages  
of MOSFETs, such as voltage control, very fast switching,  
ease of paralleling and electrical parameter temperature  
stability. They are well-suited for applications such as  
switching power supplies, motor controls, inverters,  
choppers, audio amplifiers, high energy pulse circuits, and  
virtually any application where high reliability is required.  
The HEXFET transistor’s totally isolated package eliminates  
the need for additional isolating material between the device  
and the heatsink. This improves thermal efficiency and  
reduces drain capacitance.  
TO-257AA  
Features:  
n
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Glass Eyelets  
For Space Level Applications  
Refer to Ceramic Version Part  
Numbers IRFY9140C, IRFY9140CM  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= -10V, T = 25°C Continuous Drain Current  
-15.8  
D
D
GS  
GS  
C
A
I
= -10V, T = 100°C Continuous Drain Current  
-10  
-60  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
100  
W
W/°C  
V
D
C
Linear Derating Factor  
0.8  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
640  
mJ  
A
AS  
I
-15.8  
10  
AR  
E
AR  
dv/dt  
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
mJ  
V/ns  
-5.5  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300(0.063in./1.6mm from case for 10 sec)  
4.3 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
01/18/07  
1234567

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IRFY9230 SEME-LAB

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