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IRFY9240CMSCX PDF预览

IRFY9240CMSCX

更新时间： 2024-01-07 20:41:49
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
7页 143K
描述
Power Field-Effect Transistor, 9.4A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,

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IRFY9240CMSCX 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Transferred包装说明：FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.22其他特性：HIGH RELIABILITY
雪崩能效等级（Eas）：700 mJ外壳连接：ISOLATED
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：200 V
最大漏极电流 (ID)：9.4 A最大漏源导通电阻：0.52 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-257AA
JESD-30 代码：R-MSFM-P3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：METAL封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL最大脉冲漏极电流 (IDM)：36 A
认证状态：Not Qualified表面贴装：NO
端子面层：TIN LEAD端子形式：PIN/PEG
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRFY9240CMSCX 数据手册

 浏览型号IRFY9240CMSCX的Datasheet PDF文件第2页浏览型号IRFY9240CMSCX的Datasheet PDF文件第3页浏览型号IRFY9240CMSCX的Datasheet PDF文件第4页浏览型号IRFY9240CMSCX的Datasheet PDF文件第5页浏览型号IRFY9240CMSCX的Datasheet PDF文件第6页浏览型号IRFY9240CMSCX的Datasheet PDF文件第7页 
PD - 94199  
IRFY9240,IRFY9240M  
200V, P-CHANNEL  
POWER MOSFET  
THRU-HOLE (TO-257AA)  
HEXFET® MOSFET TECHNOLOGY  
Product Summary  
Part Number Rds(on) Id  
Eyelets  
IRFY9240  
0.51 Ω  
0.51 Ω  
-9.4A Glass  
-9.4A Glass  
IRFY9240M  
HEXFET® MOSFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors. The  
efficient geometry design achieves very low on-state re-  
sistance combined with high transconductance. HEXFET  
transistors also feature all of the well-established advan-  
tages of MOSFETs, such as voltage control, very fast switch-  
ing, ease of paralleling and electrical parameter temperature  
stability. They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, choppers,  
audio amplifiers, high energy pulse circuits, and virtually  
any application where high reliability is required. The  
HEXFET transistor’s totally isolated package eliminates the  
need for additional isolating material between the device  
and the heatsink. This improves thermal efficiency and  
reduces drain capacitance.  
TO-257AA  
Features:  
n
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Glass Eyelets  
For Space Level Applications  
Refer to Ceramic Version Part  
Numbers IRFY9240C, IRFY9240CM  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= -10V, T = 25°C Continuous Drain Current  
-9.4  
D
GS  
C
A
I
= -10V, T = 100°C Continuous Drain Current  
-6.0  
-36  
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
100  
W
W/°C  
V
D
C
Linear Derating Factor  
0.8  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
700  
mJ  
A
AS  
I
-9.4  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
10  
mJ  
V/ns  
AR  
dv/dt  
-5.5  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300(0.063in.(1.6mm)from case for 10 sec)  
3.3 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
4/18/01  
1234567

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与IRFY9240CMSCX相关器件

型号 品牌 获取价格 描述 数据表
IRFY9240CMSCXPBF INFINEON

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 		Power Field-Effect Transistor, 9.4A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Me
IRFY9240CSCX INFINEON

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 		-200V Single P-Channel Hi-Rel MOSFET in a TO-257AA package - Screening Level TX
IRFY9240EAPBF INFINEON

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 		Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Me
IRFY9240EBPBF INFINEON

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 		Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Me
IRFY9240ECPBF INFINEON

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 		Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Me
IRFY9240ED INFINEON

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 		Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Me
IRFY9240EPBF INFINEON

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 		Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Me
IRFY9240M ETC

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 		TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 7.7A I(D) | TO-220
IRFY9240ME INFINEON

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 		Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Me
IRFY9240MEA INFINEON

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