是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Transferred | 包装说明: | FLANGE MOUNT, R-MSFM-P3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.22 | 其他特性: | HIGH RELIABILITY |
雪崩能效等级(Eas): | 700 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 9.4 A | 最大漏源导通电阻: | 0.52 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-257AA |
JESD-30 代码: | R-MSFM-P3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | METAL | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 36 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFY9240CMSCXPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9.4A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Me | |
IRFY9240CSCX | INFINEON |
获取价格 |
-200V Single P-Channel Hi-Rel MOSFET in a TO-257AA package - Screening Level TX | |
IRFY9240EAPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Me | |
IRFY9240EBPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Me | |
IRFY9240ECPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Me | |
IRFY9240ED | INFINEON |
获取价格 |
Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Me | |
IRFY9240EPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Me | |
IRFY9240M | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 7.7A I(D) | TO-220 | |
IRFY9240ME | INFINEON |
获取价格 |
Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Me | |
IRFY9240MEA | INFINEON |
获取价格 |
暂无描述 |