Datasheet > 晶体管 > 功率场效应晶体管> IRFW530ATM_NL

IRFW530ATM_NL

更新时间： 2024-09-15 13:08:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	267K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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技术参数
数据手册

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IRFW530ATM_NL 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	14 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	3.8 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

IRFW530ATM_NL 数据手册

IRFW/I530A

Advanced Power MOSFET

FEATURES

BV_DSS= 100 V

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

R_DS(on)= 0.11

I_D= 14 A

Improved Gate Charge

Extended Safe Operating Area

D²-PAK

I²-PAK

175 Operating Temperature

Lower Leakage Current : 10 A (Max.) @ V_DS= 100V

Lower R_DS(ON): 0.092 (Typ.)

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

100

Units

V_DSS

Continuous Drain Current (T_C=25 C)

I_D

Continuous Drain Current (T_C=100 C)

9.9

I_DM

V_GS

E_AS

I_AR

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

261

E_AR

dv/dt

Repetitive Avalanche Energy

5.5

6.5

3.8

V/ns

Peak Diode Recovery dv/dt

)

Total Power Dissipation (T_A=25

P_D

Total Power Dissipation (T =25

)

Linear Derating Factor

0.36

W/ C

Operating Junction and

Storage Temperature Range

T_J, T_STG

- 55 to +175

300

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

T_L

Thermal Resistance

Symbol

Characteristic

Typ.

Max.

Units

R _q

Junction-to-Case

2.74

R_q

Junction-to-Ambient

C /W

R_q

62.5

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

12 3 4 5 6 7 8

中文翻译

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