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IRFW630B PDF预览

IRFW630B

更新时间: 2024-11-05 22:14:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 650K
描述
200V N-Channel MOSFET

IRFW630B 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.74雪崩能效等级(Eas):160 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):9 A
最大漏极电流 (ID):9 A最大漏源导通电阻:0.4 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):72 W
最大脉冲漏极电流 (IDM):36 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFW630B 数据手册

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IRFW630B / IRFI630B  
200V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switching DC/DC converters,  
switch mode power supplies, DC-AC converters for  
uninterrupted power supply and motor control.  
9.0A, 200V, R  
= 0.4@V = 10 V  
DS(on) GS  
Low gate charge ( typical 22 nC)  
Low Crss ( typical 22 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
!
D
G!  
D2-PAK  
IRFW Series  
I2-PAK  
IRFI Series  
G
S
G D S  
!
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
IRFW630B / IRFI630B  
Units  
V
V
I
Drain-Source Voltage  
200  
9.0  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
5.7  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
36  
A
DM  
V
E
I
Gate-Source Voltage  
± 30  
160  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
9.0  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
7.2  
mJ  
V/ns  
W
AR  
dv/dt  
5.5  
Power Dissipation (T = 25°C) *  
3.13  
72  
P
A
D
Power Dissipation (T = 25°C)  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.57  
-55 to +150  
W/°C  
°C  
T , T  
J
stg  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
1.74  
40  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
--  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2002 Fairchild Semiconductor Corporation  
Rev. C, December 2002  

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