Datasheet > IRFW630B

IRFW630B

更新时间： 2024-11-06 12:34:51

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	1030K
描述
200V N-Channel MOSFET

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IRFW630B 数据手册

IRFW630B / IRFI630B

200V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters,

switch mode power supplies, DC-AC converters for

uninterrupted power supply and motor control.

•

9.0A, 200V, R

= 0.4Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 22 nC)

Low Crss ( typical 22 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

●

◀

▲

●

D²-PAK

IRFW Series

I²-PAK

IRFI Series

G D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

IRFW630B / IRFI630B

Units

Drain-Source Voltage

200

9.0

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

5.7

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

160

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

9.0

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

7.2

V/ns

dv/dt

5.5

Power Dissipation (T = 25°C) *

3.13

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.57

-55 to +150

W/°C

°C

T , T

stg

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

1.74

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

62.5

www.kersemi.com

12 3 4 5 6 7 8

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