Datasheet > IRFW630BTM-FP001

IRFW630BTM-FP001

更新时间： 2024-11-07 14:55:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	866K
描述
分立式 MOSFET

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IRFW630BTM-FP001 技术参数

是否无铅：	不含铅	生命周期：	Not Recommended
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	not_compliant
风险等级：	5.21	Is Samacsys：	N
雪崩能效等级（Eas）：	160 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	200 V
最大漏极电流 (Abs) (ID)：	9 A	最大漏极电流 (ID)：	9 A
最大漏源导通电阻：	0.4 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	29 pF	JEDEC-95代码：	TO-263AB
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	245
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	72 W
最大脉冲漏极电流 (IDM)：	36 A	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	Matte Tin (Sn)
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	30	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	最大关闭时间（toff）：	270 ns
最大开启时间（吨）：	180 ns	Base Number Matches：	1

IRFW630BTM-FP001 数据手册

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与IRFW630BTM-FP001相关器件

型号	品牌	获取价格	描述	数据表
IRFW634A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 8.1A I(D) \| TO-263AB
IRFW634ATM	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IRFW634B	FAIRCHILD	获取价格	250V N-Channel MOSFET
IRFW634BTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IRFW634BTM_FP001	ROCHESTER	获取价格	Power Field-Effect Transistor
IRFW634BTM_FP001	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFW640	FAIRCHILD	获取价格	200V N-Channel MOSFET
IRFW640A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 18A I(D) \| TO-263AB
IRFW640B	FAIRCHILD	获取价格	200V N-Channel MOSFET
IRFW640BTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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