型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFW630A | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-263AB | |
IRFW630B | FAIRCHILD |
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200V N-Channel MOSFET | |
IRFW630B | KERSEMI |
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200V N-Channel MOSFET | |
IRFW630BTM | FAIRCHILD |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IRFW630BTM_FP001 | FAIRCHILD |
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Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal | |
IRFW630BTM-FP001 | ONSEMI |
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分立式 MOSFET | |
IRFW634A | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8.1A I(D) | TO-263AB | |
IRFW634ATM | FAIRCHILD |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IRFW634B | FAIRCHILD |
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250V N-Channel MOSFET | |
IRFW634BTM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |