IRFW540

更新时间： 2024-09-14 22:32:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	235K
描述
Advanced Power MOSFET

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中文翻译

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数据手册

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IRFW540 数据手册

IRFW/I540A

Advanced Power MOSFET

FEATURES

BV_DSS= 100 V

R_DS(on)= 0.052 Ω

I_D= 28 A

n Avalanche Rugged Technology

n Rugged Gate Oxide Technology

n Lower Input Capacitance

n Improved Gate Charge

n Extended Safe Operating Area

n 175℃ Operating Temperature

n Lower Leakage Current : 10 μA (Max.) @ V_DS= 100V

n Lower R_DS(ON): 0.041 Ω (Typ.)

D²-PAK

I²-PAK

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

100

Units

V_DSS

Continuous Drain Current (T_C=25℃)

Continuous Drain Current (T_C=100℃)

Drain Current-Pulsed

I_D

19.8

110

±20

523

I_DM

V_GS

E_AS

I_AR

①

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

②

①

③

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

10.7

6.5

V/ns

Total Power Dissipation (T_A=25℃)

Total Power Dissipation (T_C=25℃)

Linear Derating Factor

3.8

P_D

107

0.71

W/℃

Operating Junction and

T_J, T_STG

- 55 to +175

300

Storage Temperature Range

℃

Maximum Lead Temp. for Soldering

Purposes, 1/8? from case for 5-seconds

T_L

Thermal Resistance

Symbol

Characteristic

Typ.

Max.

Units

R_θJC

Junction-to-Case

Junction-to-Ambient

1.4

R_θJA

℃/W

62.5

* When mounted on the minimum pad size recommended (PCB Mount).

Rev. B1

2001 Fairchild Semiconductor Corporation

12 3 4 5 6 7

中文翻译

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与IRFW540相关器件

型号	品牌	获取价格	描述	数据表
IRFW540A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFW540ATM	ROCHESTER	获取价格	28A, 100V, 0.052ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
IRFW540ATM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 28A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Me
IRFW540ATM_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 28A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Me
IRFW550A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFW550ATM	FAIRCHILD	获取价格	暂无描述
IRFW610A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 3.3A I(D) \| TO-263AB
IRFW610B	FAIRCHILD	获取价格	200V N-Channel MOSFET
IRFW610BTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IRFW610BTM_FP001	FAIRCHILD	获取价格	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met