Datasheet > IRFU9024N

IRFU9024N

更新时间： 2024-11-05 12:23:47

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管开关脉冲
页数	文件大小	规格书
10页	394K
描述
HEXFETÂ® Power MOSFET

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数据手册

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IRFU9024N 数据手册

IRFR/U9024N

HEXFET^®Power MOSFET

^lUltra Low On-Resistance

^lP-Channel

V_DSS= -55V

^lSurface Mount (IRFR9024N)

^lStraight Lead (IRFU9024N)

^lAdvanced Process Technology

^lFast Switching

R_DS(on)= 0.175Ω

I_D= -11A

^lFully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

I-Pa k

D -Pa k

T O -2 52 A A

TO -2 5 1 AA

The D-Pak is designed for surface mounting using

vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-

hole mounting applications. Power dissipation levels

up to 1.5 watts are possible in typical surface mount

applications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-11

-8

-44

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.30

± 20

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

-6.6

3.8

-10

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

3.3

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)**

Junction-to-Ambient

°C/W

110

1 /10

www.freescale.net.cn

12 3 4 5 6 7...10

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与IRFU9024N相关器件

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IRFU9024NC	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRFU9024NCPBF	KERSEMI	获取价格	HEXFET Power MOSFET
IRFU9024NCPBF	INFINEON	获取价格	HEXFET POWER MOSFET
IRFU9024NPBF	INFINEON	获取价格	HEXFET POWER MOSFET ( VDSS = -55V , RDS(on) =
IRFU9024NPBF	KERSEMI	获取价格	ULTRA LOW ON-ORSISTANCE
IRFU9024PBF	KERSEMI	获取价格	Power MOSFET
IRFU9024PBF	VISHAY	获取价格	Power MOSFET
IRFU9024PBF	INFINEON	获取价格	HEXFET POWER MOSFET ( VDSS = -60V , RDS(on) =
IRFU9110	INTERSIL	获取价格	3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs
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