Datasheet > IRFU9110PBF

IRFU9110PBF

更新时间： 2024-11-09 12:04:59

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	3898K
描述
Power MOSFET

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中文翻译

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数据手册

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IRFU9110PBF 数据手册

IRFR9110, IRFU9110, SiHFR9110, SiHFU9110

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

- 100

Available

• Repetitive Avalanche Rated

R_DS(on)(Ω)

V_GS= - 10 V

1.2

RoHS*

• Surface Mount (IRFR9110/SiHFR9110)

COMPLIANT

Q_g(Max.) (nC)

8.7

• Straight Lead (IRFU9110/SiHFU9110)

_gs(nC)

2.2

• Available in Tape and Reel

Q_gd(nC)

4.1

• P-Channel

Configuration

Single

• Fast Switching

• Lead (Pb)-free Available

DPAK

(TO-252)

IPAK

(TO-251)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effictiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU Series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surcace mount applications.

P-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR9110TRPbF^a

SiHFR9110T-E3^a

IRFR9110TR^a

IPAK (TO-251)

IRFU9110PbF

SiHFU9110-E3

IRFU9110

IRFR9110PbF

SiHFR9110-E3

IRFR9110

IRFR9110TRLPbF^a

SiHFR9110TL-E3^a

IRFR9110TRL^a

Lead (Pb)-free

SnPb

SiHFR9110

SiHFR9110TL^a

SiHFR9110T^a

SiHFU9110

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

- 100

V_GS

T_C= 25 °C

T_C=100°C

- 3.1

- 2.0

- 12

Continuous Drain Current

_GSat - 10 V

I_D

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.20

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

0.020

140

E_AS

I_AR

- 3.1

2.5

Repetitive Avalanche Energy^a

E_AR

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

T_C= 25 °C

P_D

V/ns

°C

T_A= 25 °C

2.5

dV/dt

- 5.5

- 55 to + 150

260^d

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= - 25 V, starting T_J= 25 °C, L = 21 mH, R_G= 25 Ω, I_AS= - 3.1 A (see fig. 12).

c. I_SD≤ - 4.0 A, dI/dt ≤ 75 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

www.kersemi.com

12 3 4 5 6 7

中文翻译

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与IRFU9110PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFU9111	SAMSUNG	获取价格	Power Field-Effect Transistor, 3.2A I(D), 80V, 1.2ohm, 1-Element, P-Channel, Silicon, Meta
IRFU9111	INFINEON	获取价格	Power Field-Effect Transistor, 3.2A I(D), 80V, 1.2ohm, 1-Element, P-Channel, Silicon, Meta
IRFU9120	SAMSUNG	获取价格	Power Field-Effect Transistor, 5.9A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met
IRFU9120	INFINEON	获取价格	Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-5.6A)
IRFU9120	INTERSIL	获取价格	5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs
IRFU9120	VISHAY	获取价格	Power MOSFET
IRFU9120	KERSEMI	获取价格	Power MOSFET
IRFU9120_R4941	FAIRCHILD	获取价格	Transistor
IRFU9120N	FREESCALE	获取价格	HEXFETÂ® Power MOSFET
IRFU9120N	KERSEMI	获取价格	Ultra Low On-Resistance

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