IRFU9214

更新时间： 2024-11-08 22:51:39

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
10页	108K
描述
Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A)

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中文翻译

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数据手册

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IRFU9214 数据手册

PD - 9.1658A

IRFR/U9214

PRELIMINARY

HEXFET^®Power MOSFET

l P-Channel

V_DSS= -250V

R_DS(on)= 3.0Ω

I_D= -2.7A

l Surface Mount (IRFR9214)

l Straight Lead (IRFU9214)

l Advanced Process Technology

l Fast Switching

l Fully Avalanche Rated

Description

Third Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve low

on-resistance per silicon area. This benefit, combined

with the fast switching speed and ruggedized device

design that HEXFET Power MOSFETs are well known for,

provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

I-Pa k

D -Pa k

T O -2 52 A A

TO -2 5 1 AA

The D-Pak is designed for surface mounting using vapor

phase, infrared, orwavesolderingtechniques. Thestraight

lead version (IRFU series) is for through-hole mounting

applications. Power dissipation levels up to 1.5 watts are

possible in typical surface mount applications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-2.7

-1.7

-11

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.40

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

Avalanche Current

100

-2.7

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

5.0

-5.0

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

260 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

2.5

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)**

Junction-to-Ambient

°C/W

110

9/23/97

12 3 4 5 6 7...10

中文翻译

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IRFU9220	INTERSIL	获取价格	3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs
IRFU9220	SAMSUNG	获取价格	Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Met
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