Datasheet > IRFU9120PBF

IRFU9120PBF

更新时间： 2024-11-05 12:05:07

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	4046K
描述
Power MOSFET

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中文翻译

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数据手册

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IRFU9120PBF 数据手册

IRFR9120, IRFU9120, SiHFR9120, SiHFU9120

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

- 100

Available

• Repetitive Avalanche Rated

R_DS(on)(Ω)

V_GS= - 10 V

0.60

RoHS*

• Surface Mount (IRFR9120/SiHFR9120)

• Straight Lead (IRFU9120/SiHFU9120)

• Available in Tape and Reel

• P-Channel

COMPLIANT

Q_g(Max.) (nC)

3.0

_gs(nC)

Q_gd(nC)

9.0

Configuration

Single

• Fast Switching

• Lead (Pb)-free Available

DESCRIPTION

DPAK

(TO-252)

IPAK

(TO-251)

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effictiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surcace mount applications.

P-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR9120TRLPbF^a

SiHFR9120TL-E3^a

IRFR9120TRL^a

SiHFR9120TL^a

IPAK (TO-251)

IRFU9120PbF

IRFR9120PbF

SiHFR9120-E3

IRFR9120

IRFR9120TRPbF^a

SiHFR9120T-E3^a

IRFR9120TR^a

Lead (Pb)-free

SiHFU9120-E3

IRFU9120PbF

SnPb

SiHFR9120

SiHFR9120T^a

SiHFU9120

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

- 100

V_GS

T_C= 25 °C

_C= 100 °C

- 5.6

- 3.6

- 22

0.33

0.020

210

- 5.6

4.2

Continuous Drain Current

V_GSat - 10 V

I_D

Pulsed Drain Current^a

I_DM

Linear Derating Factor

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

E_AS

I_AR

E_AR

_C= 25 °C

P_D

T_A= 25 °C

2.5

dV/dt

- 5.5

V/ns

www.kersemi.com

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