Datasheet > IRFU9210

IRFU9210

更新时间： 2024-09-15 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	1583K
描述
Power MOSFET

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数据手册
替代型号

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IRFU9210 数据手册

IRFR9210, IRFU9210, SiHFR9210, SiHFU9210

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

- 200

Available

• Repetitive Avalanche Rated

_DS(on)(Ω)

V_GS= - 10 V

3.0

RoHS*

• Surface Mount (IRFR9210/SiHFR9210)

• Straight Lead (IRFU9210/SiHFU9210)

• Available in Tape and Reel

• P-Channel

Q_g(Max.) (nC)

8.9

2.1

3.9

COMPLIANT

_gs(nC)

_gd(nC)

Configuration

Single

• Fast Switching

• Lead (Pb)-free Available

DPAK

(TO-252)

IPAK

(TO-251)

DESCRIPTION

The Power MOSFETs technology is the key to Vishay’s

advanced line of Power MOSFET transistors. The efficient

geometry and unique processing of the Power MOSFET

design achieve very low on-state resistance combined with

high transconductance and extreme device ruggedness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

P-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IPAK (TO-251)

IRFU9210PbF

SiHFU9210-E3

IRFU9210

IRFR9210PbF

SiHFR9210-E3

IRFR9210

IRFR9210TRPbF^a

SiHFR9210T-E3^a

IRFR9210TR^a

Lead (Pb)-free

IRFR9210TRL^a

SiHFR9210TL^a

SnPb

SiHFR9210

SiHFR9210T^a

SiHFU9210

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

- 200

_C= 25 °C

- 1.9

- 1.2

- 7.6

0.20

Continuous Drain Current

_GSat - 10 V

I_D

T_C=100°C

Pulsed Drain Current^a

Linear Derating Factor

I_DM

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

0.020

300

- 1.9

2.5

E_AS

I_AR

E_AR

Repetitive Avalanche Energy^a

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_C= 25 °C

T_A= 25 °C

2.5

P_D

V/ns

°C

dV/dt

T_J, T_stg

- 5.0

- 55 to + 150

260^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= - 50 V, starting T_J= 25 °C, L = 124 mH, R_G= 25 Ω, I_AS= - 1.9 A (see fig. 12).

c. I_SD≤ - 1.9 A, dI/dt ≤ 70 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91281

S-Pending-Rev. A, 21-Jul-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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IRFU9210 替代型号

型号	品牌	替代类型	描述	数据表
IRFU9210PBF	VISHAY	完全替代	Power MOSFET
SIHFU9210	VISHAY	功能相似	Power MOSFET

与IRFU9210相关器件

型号	品牌	获取价格	描述	数据表
IRFU9210N	INFINEON	获取价格	HEXFET Power MOSFET
IRFU9210PBF	INFINEON	获取价格	HEXFET POWER MOSFET ( VDSS = -200V , RDS(on)
IRFU9210PBF	KERSEMI	获取价格	Power MOSFET
IRFU9210PBF	VISHAY	获取价格	Power MOSFET
IRFU9211	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 150V V(BR)DSS \| 2A I(D) \| TO-251AA
IRFU9212	SAMSUNG	获取价格	Power Field-Effect Transistor, 1.6A I(D), 200V, 4.5ohm, 1-Element, P-Channel, Silicon, Met
IRFU9214	INFINEON	获取价格	Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A)
IRFU9214	VISHAY	获取价格	Power MOSFET
IRFU9214	KERSEMI	获取价格	Power MOSFET
IRFU9214N	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 250V V(BR)DSS \| 2.8A I(D) \| TO-251AA

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