Datasheet > IRFU9120N

IRFU9120N

更新时间： 2024-11-09 12:23:47

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
10页	286K
描述
HEXFETÂ® Power MOSFET

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IRFU9120N 数据手册

IRFR/U9120N

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel

l Surface Mount (IRFR9120N)

l Straight Lead (IRFU9120N)

l Advanced Process Technology

l Fast Switching

V_DSS= -100V

R_DS(on)= 0.48Ω

I_D= -6.6A

l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

knownfor, providesthedesignerwithanextremelyefficient

and reliable device for use in a wide variety of applications.

D -Pak

I-Pak

TO -252AA

TO -251AA

The D-Pak is designed for surface mounting using vapor

phase, infrared, orwavesolderingtechniques. Thestraight

lead version (IRFU series) is for through-hole mounting

applications. Power dissipation levels up to 1.5 watts are

possible in typical surface mount applications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-6.6

-4.2

-26

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.32

± 20

100

-6.6

4.0

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

-5.0

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

3.1

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)**

Junction-to-Ambient

°C/W

110

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IRFU9120TR	VISHAY	获取价格	Transistor
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IRFU9121	INFINEON	获取价格	Power Field-Effect Transistor, 5.9A I(D), 80V, 0.6ohm, 1-Element, P-Channel, Silicon, Meta
IRFU9210	KERSEMI	获取价格	Power MOSFET
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