Datasheet > IRFU9214

IRFU9214

更新时间： 2024-11-05 12:33:43

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	3394K
描述
Power MOSFET

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数据手册

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IRFU9214 数据手册

IRFR9214, IRFU9214, SiHFR9214, SiHFU9214

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• P-Channel

- 250

Available

• Surface Mount (IRFR9214/SiHFR9214)

R_DS(on)(Ω)

V_GS= - 10 V

3.0

• Straight Lead (IRFU9214/SiHFU9214)

• Advanced Process Technology

• Fast Switching

RoHS*

COMPLIANT

Q_g(Max.) (nC)

3.1

_gs(nC)

_gd(nC)

6.8

• Fully Avalanche Rated

Configuration

Single

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

DPAK

(TO-252)

IPAK

(TO-251)

P-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR9214TRPbF^a

SiHFR9214T-E3^a

IRFR9214TR^a

IPAK (TO-251)

IRFU9214PbF

SiHFU9214-E3

IRFU9214

IRFR9214PbF

SiHFR9214-E3

IRFR9214

IRFR9214TRLPbF^a

SiHFR9214TL-E3^a

IRFR9214TRL^a

Lead (Pb)-free

SnPb

SiHFR9214

SiHFR9214TL^a

SiHFR9214T^a

SiHFU9214

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

- 250

V_GS

T_C= 25 °C

T_C=100°C

- 2.7

Continuous Drain Current

V_GSat - 10 V

I_D

- 1.7

- 11

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.40

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

100

- 2.7

E_AR

5.0

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

- 5.0

- 55 to + 150

260^d

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

°C

for 10 s

www.kersemi.com

12 3 4 5 6 7

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IRFU9220	SAMSUNG	获取价格	Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Met
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