Datasheet > IRFU9220

IRFU9220

更新时间： 2024-09-13 22:25:23

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
8页	103K
描述
3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs

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IRFU9220 数据手册

IRFR9220, IRFU9220

Data Sheet

July 1999

File Number 4015.3

3.6A, 200V, 1.500 Ohm, P-Channel Power

MOSFETs

Features

• 3.6A, 200V

These are advanced power MOSFETs designed, tested, and

guaranteed to withstand a speciﬁc level of energy in the

avalanche breakdown mode of operation. These are

P-Channel enhancement-mode silicon gate power ﬁeld-

effect transistors designed for applications such as switching

regulators, switching converters, motor drivers, relay drivers,

and drivers for high-power bipolar switching transistors

requiring high speed and low gate-drive power. These types

can be operated directly from integrated circuits.

• r_DS(ON)= 1.500Ω

• Temperature Compensating PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA17502.

Symbol

Ordering Information

PART NUMBER

PACKAGE

TO-252AA

TO-251AA

BRAND

IF9220

IRFR9220

IRFU9220

NOTE: When ordering use the entire part number. Add the sufﬁx 9A

to obtain the TO-252AA variant in tape and reel, e.g., IRFR92209A.

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

SOURCE

DRAIN

GATE

SOURCE

DRAIN (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

4-89

12 3 4 5 6 7 8

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IRFU9220 替代型号

型号	品牌	替代类型	描述	数据表
IRFU9220PBF	VISHAY	功能相似	Power MOSFET

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