IRFUC20

更新时间： 2024-09-14 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	1824K
描述
Power MOSFET

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IRFUC20 数据手册

IRFRC20, IRFUC20, SiHFRC20, SiHFUC20

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

600

Available

• Repetitive Avalanche Rated

RoHS*

• Surface Mount (IRFRC20/SiHFRC20)

COMPLIANT

_DS(on)(Ω)

V_GS= 10 V

4.4

Q_g(Max.) (nC)

3.0

• Straight Lead (IRFUC20/SiHFUC20)

• Available in Tape and Reel

• Fast Switching

_gs(nC)

_gd(nC)

8.9

Configuration

Single

• Ease of Paralleling

• Lead (Pb)-free Available

DPAK

(TO-252)

IPAK

(TO-251)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D PAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFUC/SiHFUC series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surcace mount applications.

N-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFRC20PbF

SiHFRC20-E3

IRFRC20

DPAK (TO-252)

IRFRC20TRLPbF^a

SiHFRC20TL-E3^a

IRFRC20TRL^a

DPAK (TO-252)

IRFRC20TRPbF^a

SiHFRC20T-E3^a

IRFRC20TR^a

DPAK (TO-252)

IRFRC20TRRPbF^a

SiHFRC20TR-E3^a

IRFRC20TRR^a

IPAK (TO-251)

IRFUC20PbF

SiHFUC20-E3

IRFUC20

Lead (Pb)-free

SnPb

SiHFRC20

SiHFRC20TL^a

SiHFRC20T^a

SiHFRC20TR^a

SiHFUC20

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

600

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

2.0

Continuous Drain Current

_GSat 10 V

I_D

T_C=100°C

1.3

Pulsed Drain Current^a

I_DM

8.0

Linear Derating Factor

0.33

0.020

450

2.0

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

E_AS

I_AR

Repetitive Avalanche Energy^a

E_AR

4.2

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

T_C= 25 °C

P_D

V/ns

°C

T_A= 25 °C

2.5

dV/dt

3.0

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

260^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 206 mH, R_G= 25 Ω, I_AS= 2.0 A (see fig. 12).

c. I_SD≤ 2.0 A, dI/dt ≤ 40 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91285

S-81392-Rev. A, 07-Jul-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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IRFUC20 替代型号

型号	品牌	替代类型	描述	数据表
IRFUC20PBF	VISHAY	完全替代	Power MOSFET

与IRFUC20相关器件

型号	品牌	获取价格	描述	数据表
IRFUC20PBF	VISHAY	获取价格	Power MOSFET
IRFUC20PBF	KERSEMI	获取价格	Power MOSFET
IRFUC20PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFV064	INFINEON	获取价格	HEXFET TRANSISTOR, N-CHANNEL
IRFV064D	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 45A I(D) \| TO-258VAR
IRFV064U	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 45A I(D) \| TO-258VAR
IRFV260	INFINEON	获取价格	TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*)
IRFV260D	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 200V, 0.068ohm, 1-Element, N-Channel, Silicon, Me
IRFV260DPBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 200V, 0.068ohm, 1-Element, N-Channel, Silicon, Me
IRFV260U	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 200V, 0.068ohm, 1-Element, N-Channel, Silicon, Me

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