Datasheet > IRFW150A

IRFW150A

更新时间： 2024-09-16 10:22:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	254K
描述
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

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IRFW150A 数据手册

IRFW/I510A

Advanced Power MOSFET

FEATURES

BV_DSS= 100 V

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

R_DS(on)= 0.4

I_D= 5.6 A

Improved Gate Charge

Extended Safe Operating Area

D²-PAK

I²-PAK

175 Operating Temperature

Lower Leakage Current : 10 A (Max.) @ V_DS= 100V

Lower R_DS(ON): 0.289 (Typ.)

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

100

5.6

Units

V_DSS

Continuous Drain Current (T_C=25 C)

I_D

Continuous Drain Current (T_C=100 C)

I_DM

V_GS

E_AS

I_AR

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

5.6

3.3

6.5

3.8

E_AR

dv/dt

Repetitive Avalanche Energy

V/ns

Peak Diode Recovery dv/dt

)

Total Power Dissipation (T_A=25

Total Power Dissipation (T_C=25

Linear Derating Factor

P_D

)

0.22

W/ C

Operating Junction and

T_J, T_STG

- 55 to +175

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

T_L

300

Thermal Resistance

Symbol

Characteristic

Typ.

Max.

Units

R_q

Junction-to-Case

4.51

R_q

Junction-to-Ambient

R_q

62.5

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

12 3 4 5 6 7

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