Datasheet > IRFU9310

IRFU9310

更新时间： 2024-09-14 12:05:07

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲
页数	文件大小	规格书
7页	3346K
描述
Power MOSFET

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数据手册

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IRFU9310 数据手册

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310

Power MOSFET

FEATURES

• P-Channel

• Surface Mount (IRFR9310/SiHFR9310)

• Straight Lead (IRFU9310/SiHFU9310)

• Advanced Process Technology

• Fast Switching

• Fully Avalanche Rated

• Lead (Pb)-free Available

PRODUCT SUMMARY

V_DS(V)

- 400

Available

R_DS(on)(Ω)

V_GS= - 10 V

7.0

RoHS*

Q_g(Max.) (nC)

3.2

COMPLIANT

_gs(nC)

_gd(nC)

5.0

Configuration

Single

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

D PAK

(TO-252)

IPAK

(TO-251)

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

P-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR9310PbF

SiHFR9310-E3

IRFR9310

DPAK (TO-252)

IRFR9310TRLPbF^a

SiHFR9310TL-E3^a

IRFR9310TRL^a

SiHFR9310TL^a

DPAK (TO-252)

IRFR9310TRPbF^a

SiHFR9310T-E3^a

IRFR9310TR^a

DPAK (TO-252)

IRFR9310TRRPbF^a

SiHFR9310TR-E3^a

IPAK (TO-251)

IRFU9310PbF

SiHFU9310-E3

IRFU9310

Lead (Pb)-free

SnPb

SiHFR9310

SiHFR9310T^a

SiHFU9310

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

- 400

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

- 1.8

- 1.1

- 7.2

0.40

Continuous Drain Current

V_GSat - 10 V

I_D

Pulsed Drain Current^a

I_DM

Linear Derating Factor

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

- 1.8

5.0

E_AR

Maximum Power Dissipation

T_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

- 24

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T_J= 25 °C, L = 57 mH, R_G= 25 Ω, I_AS= - 1.8 A (see fig. 12).

c. I_SD≤ - 1.1 A, dI/dt ≤ 450 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

www.kersemi.com

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