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IRFU9N20DPBF

更新时间： 2024-09-14 03:15:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
10页	223K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRFU9N20DPBF 数据手册

PD - 95376A

IRFR9N20DPbF

IRFU9N20DPbF

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

V_DSS

R_DS(on)max

I_D

l Lead-Free

200V

0.38Ω

9.4A

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D-Pak

I-Pak

IRFR9N20D

IRFU9N20D

Absolute Maximum Ratings

Parameter

Max.

9.4

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

6.7

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.57

± 30

5.0

V_GS

dv/dt

T_J

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Typical SMPS Topologies

l Telecom 48V input Forward Converter

Notes through are on page 10

www.irf.com

12/06/04

12 3 4 5 6 7...10

中文翻译

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