Datasheet > IRFUC20

IRFUC20

更新时间： 2024-09-14 12:04:59

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲
页数	文件大小	规格书
7页	4340K
描述
Power MOSFET

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中文翻译

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数据手册

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IRFUC20 数据手册

IRFRC20, IRFUC20, SiHFRC20, SiHFUC20

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

600

Available

• Repetitive Avalanche Rated

RoHS*

• Surface Mount (IRFRC20/SiHFRC20)

COMPLIANT

R_DS(on)(Ω)

V_GS= 10 V

4.4

Q_g(Max.) (nC)

3.0

• Straight Lead (IRFUC20/SiHFUC20)

• Available in Tape and Reel

• Fast Switching

_gs(nC)

_gd(nC)

8.9

Configuration

Single

• Ease of Paralleling

• Lead (Pb)-free Available

DPAK

(TO-252)

IPAK

(TO-251)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D PAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFUC/SiHFUC series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surcace mount applications.

N-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFRC20PbF

SiHFRC20-E3

IRFRC20

DPAK (TO-252)

IRFRC20TRLPbF^a

SiHFRC20TL-E3^a

IRFRC20TRL^a

DPAK (TO-252)

IRFRC20TRPbF^a

SiHFRC20T-E3^a

IRFRC20TR^a

DPAK (TO-252)

IRFRC20TRRPbF^a

SiHFRC20TR-E3^a

IRFRC20TRR^a

IPAK (TO-251)

IRFUC20PbF

SiHFUC20-E3

IRFUC20

Lead (Pb)-free

SnPb

SiHFRC20

SiHFRC20TL^a

SiHFRC20T^a

SiHFRC20TR^a

SiHFUC20

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

600

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

2.0

Continuous Drain Current

_GSat 10 V

I_D

1.3

Pulsed Drain Current^a

I_DM

8.0

Linear Derating Factor

0.33

0.020

450

2.0

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

E_AS

I_AR

Repetitive Avalanche Energy^a

E_AR

4.2

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

T_C= 25 °C

P_D

V/ns

°C

T_A= 25 °C

2.5

dV/dt

3.0

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

260^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 206 mH, R_G= 25 Ω, I_AS= 2.0 A (see fig. 12).

c. I_SD≤ 2.0 A, dI/dt ≤ 40 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

www.kersemi.com

12 3 4 5 6 7

中文翻译

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与IRFUC20相关器件

型号	品牌	获取价格	描述	数据表
IRFUC20PBF	VISHAY	获取价格	Power MOSFET
IRFUC20PBF	KERSEMI	获取价格	Power MOSFET
IRFUC20PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFV064	INFINEON	获取价格	HEXFET TRANSISTOR, N-CHANNEL
IRFV064D	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 45A I(D) \| TO-258VAR
IRFV064U	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 45A I(D) \| TO-258VAR
IRFV260	INFINEON	获取价格	TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*)
IRFV260D	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 200V, 0.068ohm, 1-Element, N-Channel, Silicon, Me
IRFV260DPBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 200V, 0.068ohm, 1-Element, N-Channel, Silicon, Me
IRFV260U	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 200V, 0.068ohm, 1-Element, N-Channel, Silicon, Me

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