IRFU9310

更新时间： 2024-09-13 22:51:39

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
10页	118K
描述
Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A)

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数据手册

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IRFU9310 数据手册

PD 9.1663

IRFR/U9310

PRELIMINARY

HEXFET^®Power MOSFET

l P-Channel

l Surface Mount (IRFR9310)

l Straight Lead (IRFU9310)

l Advanced Process Technology

l Fast Switching

V_DSS= -400V

R_DS(on)= 7.0Ω

l Fully Avalanche Rated

I_D= -1.8A

Description

ThirdGenerationHEXFETsfromInternationalRectifier

utilize advanced processing techniques to achieve

low on-resistance per silicon area. This benefit,

combinedwiththefastswitchingspeedandruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

I-Pa k

D -Pa k

T O -2 52 A A

TO -2 5 1 AA

The D-Pak is designed for surface mounting using

vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-

hole mounting applications. Power dissipation levels

up to 1.5 watts are possible in typical surface mount

applications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-1.8

-1.1

-7.2

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.40

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

Avalanche Current

-1.8

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

5.0

V/ns

-24

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

2.5

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)**

Junction-to-Ambient

°C/W

110

7/30/97

12 3 4 5 6 7...10

中文翻译

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