Datasheet > IRFSL52N15D

IRFSL52N15D

更新时间： 2024-11-19 22:51:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	136K
描述
Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)

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数据手册

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IRFSL52N15D 数据手册

PD - 94357

IRFB52N15D

IRFS52N15D

SMPS MOSFET

IRFSL52N15D

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

V_DSS

150V

R_DS(on)max

I_D

60A

0.032Ω

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D²Pak

TO-262

TO-220AB

IRFB52N15D

IRFS52N15D

IRFSL52N15D

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

240

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.8

Power Dissipation

320

Linear Derating Factor

2.1

W/°C

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

5.5

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.47

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

Junction-to-Ambient

–––

Notes through are on page 11

www.irf.com

12/12/01

12 3 4 5 6 7...11

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